Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

S. J. Kahng; Y. H. Ha; D. W. Moon; Y. Kuk

doi:10.1063/1.1288005

Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

S. J. Kahng, Y. H. Ha, D. W. Moon, Y. Kuk

Department of New Biology

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Abstract

Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

Original language	English
Pages (from-to)	981-983
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	7
DOIs	https://doi.org/10.1063/1.1288005
State	Published - 14 Aug 2000

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title = "Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant",

abstract = "Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.",

author = "Kahng, {S. J.} and Ha, {Y. H.} and Moon, {D. W.} and Y. Kuk",

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AU - Kahng, S. J.

AU - Ha, Y. H.

AU - Moon, D. W.

AU - Kuk, Y.

PY - 2000/8/14

Y1 - 2000/8/14

N2 - Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

AB - Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

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DO - 10.1063/1.1288005

M3 - Article

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VL - 77

SP - 981

EP - 983

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

Abstract

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