Abstract
We report screen-printed copper source/drain electrodes for a-InGaZnO (a-IGZO) thin-film transistors (TFTs). The best electrical characteristics of the a-IGZO TFTs were a field-effect mobility of 2.06 cm2/Vs, a threshold voltage of 3.40 V, an on/off current ratio of 6.0 × 10 3A/A, and a subthreshold swing of 7.02 V/decade. Resulting TFT performances indicate that blocking the inter-diffusion of Cu and impurities is a key factor to fabricate low leakage current and high performance a-IGZO TFTs with printed Cu S/D electrodes.
| Original language | English |
|---|---|
| Pages (from-to) | 161-167 |
| Number of pages | 7 |
| Journal | Molecular Crystals and Liquid Crystals |
| Volume | 586 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jan 2013 |
Bibliographical note
Funding Information:This work was supported by the Industrial strategic technology development program (10041041, Development of non-vacuum and non-lithography based 5 width Cu interconnect technology for TFT backplane) funded by the Ministry of Knowledge Economy (MKE, Korea).
Keywords
- a-IGZO
- copper ink
- oxide-based TFTs
- screen printing
- source/drain electrodes
- thin-film transistor