Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

Joonwoo Kim; Soon Moon Jeong; Jaewook Jeong

doi:10.7567/JJAP.54.114102

Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

Joonwoo Kim, Soon Moon Jeong, Jaewook Jeong

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 μm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the fieldeffect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

Original language	English
Article number	114102
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	11
DOIs	https://doi.org/10.7567/JJAP.54.114102
State	Published - Nov 2015

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© 2015 The Japan Society of Applied Physics.

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title = "Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment",

abstract = "We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 μm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the fieldeffect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.",

author = "Joonwoo Kim and Jeong, \{Soon Moon\} and Jaewook Jeong",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

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language = "English",

volume = "54",

journal = "Japanese Journal of Applied Physics",

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AU - Kim, Joonwoo

AU - Jeong, Soon Moon

AU - Jeong, Jaewook

PY - 2015/11

Y1 - 2015/11

N2 - We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 μm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the fieldeffect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

AB - We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 μm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the fieldeffect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

UR - https://www.scopus.com/pages/publications/84946075094

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DO - 10.7567/JJAP.54.114102

M3 - Article

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SN - 0021-4922

VL - 54

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

M1 - 114102

ER -

Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

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