Room-temperature ferromagnetism in Cr-doped GaN single crystals

Sang Eon Park; Hyeon Jun Lee; Yong Chan Cho; Se Young Jeong; Chae Ryong Cho; Sunglae Cho

doi:10.1063/1.1483115

Room-temperature ferromagnetism in Cr-doped GaN single crystals

Sang Eon Park, Hyeon Jun Lee, Yong Chan Cho, Se Young Jeong, Chae Ryong Cho, Sunglae Cho

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

199 Scopus citations

Abstract

We report on the discovery of a room-temperature ferromagnetism in Cr-doped GaN single crystals with a T_c=280K. The addition of Cr into GaN single crystals grown by the flux method induces the lattice constant increase due to the larger Cr atomic radius. In x-ray photoelectron spectroscopy measurement, Cr 2p_3/2 core-level exhibited spectra near 575.7 eV. This binding energy is similar to the reported value of CrN. The coercive field by magnetization-magnetic field (M-H) hysteresis curve at 250 K was 54 Oe. We verified the presence of ferromagnetic transition in the temperature dependence of the electrical resistance measurements. We discuss the ferromagnetic ordering in Cr-doped GaN bulk single crystals excluding the contribution of the substrate crystal structure.

Original language	English
Pages (from-to)	4187-4189
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	22
DOIs	https://doi.org/10.1063/1.1483115
State	Published - 3 Jun 2002

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title = "Room-temperature ferromagnetism in Cr-doped GaN single crystals",

abstract = "We report on the discovery of a room-temperature ferromagnetism in Cr-doped GaN single crystals with a Tc=280K. The addition of Cr into GaN single crystals grown by the flux method induces the lattice constant increase due to the larger Cr atomic radius. In x-ray photoelectron spectroscopy measurement, Cr 2p3/2 core-level exhibited spectra near 575.7 eV. This binding energy is similar to the reported value of CrN. The coercive field by magnetization-magnetic field (M-H) hysteresis curve at 250 K was 54 Oe. We verified the presence of ferromagnetic transition in the temperature dependence of the electrical resistance measurements. We discuss the ferromagnetic ordering in Cr-doped GaN bulk single crystals excluding the contribution of the substrate crystal structure.",

author = "Park, {Sang Eon} and Lee, {Hyeon Jun} and Cho, {Yong Chan} and Jeong, {Se Young} and Cho, {Chae Ryong} and Sunglae Cho",

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doi = "10.1063/1.1483115",

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T1 - Room-temperature ferromagnetism in Cr-doped GaN single crystals

AU - Park, Sang Eon

AU - Lee, Hyeon Jun

AU - Cho, Yong Chan

AU - Jeong, Se Young

AU - Cho, Chae Ryong

AU - Cho, Sunglae

PY - 2002/6/3

Y1 - 2002/6/3

N2 - We report on the discovery of a room-temperature ferromagnetism in Cr-doped GaN single crystals with a Tc=280K. The addition of Cr into GaN single crystals grown by the flux method induces the lattice constant increase due to the larger Cr atomic radius. In x-ray photoelectron spectroscopy measurement, Cr 2p3/2 core-level exhibited spectra near 575.7 eV. This binding energy is similar to the reported value of CrN. The coercive field by magnetization-magnetic field (M-H) hysteresis curve at 250 K was 54 Oe. We verified the presence of ferromagnetic transition in the temperature dependence of the electrical resistance measurements. We discuss the ferromagnetic ordering in Cr-doped GaN bulk single crystals excluding the contribution of the substrate crystal structure.

AB - We report on the discovery of a room-temperature ferromagnetism in Cr-doped GaN single crystals with a Tc=280K. The addition of Cr into GaN single crystals grown by the flux method induces the lattice constant increase due to the larger Cr atomic radius. In x-ray photoelectron spectroscopy measurement, Cr 2p3/2 core-level exhibited spectra near 575.7 eV. This binding energy is similar to the reported value of CrN. The coercive field by magnetization-magnetic field (M-H) hysteresis curve at 250 K was 54 Oe. We verified the presence of ferromagnetic transition in the temperature dependence of the electrical resistance measurements. We discuss the ferromagnetic ordering in Cr-doped GaN bulk single crystals excluding the contribution of the substrate crystal structure.

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VL - 80

SP - 4187

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Room-temperature ferromagnetism in Cr-doped GaN single crystals

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