Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

Chang Hee Cho; Baek Hyun Kim; Seong Ju Park

doi:10.1063/1.2219722

Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

Chang Hee Cho
, Baek Hyun Kim
, Seong Ju Park

Department of Physics and Chemistry

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

A room-temperature Coulomb blockade effect was observed in silicon quantum dots (Si QDs) spontaneously grown in a silicon nitride film. The metal-insulator-metal device containing the Si QDs showed a clear Coulomb staircase and differential conductance peaks at room temperature. The size distribution of the Si QDs determined by high-resolution transmission electron microscopy suggests that the measured single electron addition energy of 67 meV can be attributed to the charging energy of 63 meV of the Si QDs with the largest diameter of 4.7 nm among the various-sized Si QDs.

Original language	English
Article number	013116
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219722
State	Published - 2006

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory program on the Nanophotonic Semiconductors in Korea.

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title = "Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films",

abstract = "A room-temperature Coulomb blockade effect was observed in silicon quantum dots (Si QDs) spontaneously grown in a silicon nitride film. The metal-insulator-metal device containing the Si QDs showed a clear Coulomb staircase and differential conductance peaks at room temperature. The size distribution of the Si QDs determined by high-resolution transmission electron microscopy suggests that the measured single electron addition energy of 67 meV can be attributed to the charging energy of 63 meV of the Si QDs with the largest diameter of 4.7 nm among the various-sized Si QDs.",

author = "Cho, \{Chang Hee\} and Kim, \{Baek Hyun\} and Park, \{Seong Ju\}",

note = "Funding Information: This work was supported by the National Research Laboratory program on the Nanophotonic Semiconductors in Korea.",

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doi = "10.1063/1.2219722",

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volume = "89",

journal = "Applied Physics Letters",

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T1 - Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

AU - Cho, Chang Hee

AU - Kim, Baek Hyun

AU - Park, Seong Ju

N1 - Funding Information: This work was supported by the National Research Laboratory program on the Nanophotonic Semiconductors in Korea.

PY - 2006

Y1 - 2006

N2 - A room-temperature Coulomb blockade effect was observed in silicon quantum dots (Si QDs) spontaneously grown in a silicon nitride film. The metal-insulator-metal device containing the Si QDs showed a clear Coulomb staircase and differential conductance peaks at room temperature. The size distribution of the Si QDs determined by high-resolution transmission electron microscopy suggests that the measured single electron addition energy of 67 meV can be attributed to the charging energy of 63 meV of the Si QDs with the largest diameter of 4.7 nm among the various-sized Si QDs.

AB - A room-temperature Coulomb blockade effect was observed in silicon quantum dots (Si QDs) spontaneously grown in a silicon nitride film. The metal-insulator-metal device containing the Si QDs showed a clear Coulomb staircase and differential conductance peaks at room temperature. The size distribution of the Si QDs determined by high-resolution transmission electron microscopy suggests that the measured single electron addition energy of 67 meV can be attributed to the charging energy of 63 meV of the Si QDs with the largest diameter of 4.7 nm among the various-sized Si QDs.

UR - https://www.scopus.com/pages/publications/33745795081

U2 - 10.1063/1.2219722

DO - 10.1063/1.2219722

M3 - Article

AN - SCOPUS:33745795081

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013116

ER -

Room-temperature Coulomb blockade effect in silicon quantum dots in silicon nitride films

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