Reversible conductance switching characteristics in a polymer-In 2O3 nanocrystals junction

Jongmin Kim; Dong Uk Lee; Yongcheol Jo; J. Han; H. S. Kim; A. I. Inamdar; W. Jung; Hyunsik Im; Eun Kyu Kim

doi:10.1063/1.4884303

Reversible conductance switching characteristics in a polymer-In ₂O₃ nanocrystals junction

Jongmin Kim, Dong Uk Lee, Yongcheol Jo, J. Han, H. S. Kim, A. I. Inamdar, W. Jung, Hyunsik Im, Eun Kyu Kim

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A transparent polymer-based resistive switching device containing In ₂O₃ nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In₂O₃ NCs interface. The RESET and SET switching times (τ_RESET and τ_SET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τ_RESET ∼ 550 nsec and τ_SET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In₂O₃ NCs boundaries plays a key role in determining resistive switching properties.

Original language	English
Article number	067127
Journal	AIP Advances
Volume	4
Issue number	6
DOIs	https://doi.org/10.1063/1.4884303
State	Published - Jun 2014

Access to Document

10.1063/1.4884303

Cite this

@article{d2d7ddb5f0fb40b6b50d5148242d4e65,

title = "Reversible conductance switching characteristics in a polymer-In 2O3 nanocrystals junction",

abstract = "A transparent polymer-based resistive switching device containing In 2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.",

author = "Jongmin Kim and Lee, {Dong Uk} and Yongcheol Jo and J. Han and Kim, {H. S.} and Inamdar, {A. I.} and W. Jung and Hyunsik Im and Kim, {Eun Kyu}",

year = "2014",

month = jun,

doi = "10.1063/1.4884303",

language = "English",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Reversible conductance switching characteristics in a polymer-In 2O3 nanocrystals junction

AU - Kim, Jongmin

AU - Lee, Dong Uk

AU - Jo, Yongcheol

AU - Han, J.

AU - Kim, H. S.

AU - Inamdar, A. I.

AU - Jung, W.

AU - Im, Hyunsik

AU - Kim, Eun Kyu

PY - 2014/6

Y1 - 2014/6

N2 - A transparent polymer-based resistive switching device containing In 2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.

AB - A transparent polymer-based resistive switching device containing In 2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.

UR - http://www.scopus.com/inward/record.url?scp=84902449792&partnerID=8YFLogxK

U2 - 10.1063/1.4884303

DO - 10.1063/1.4884303

M3 - Article

AN - SCOPUS:84902449792

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 6

M1 - 067127

ER -

Reversible conductance switching characteristics in a polymer-In ₂O₃ nanocrystals junction

Abstract

Access to Document

Other files and links

Fingerprint

Cite this