Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiO x/Pt cell

Shin Buhm Lee; Seo Hyoung Chang; Hyang Keun Yoo; Moon Jee Yoon; Sang Mo Yang; Bo Soo Kang

doi:10.1016/j.cap.2012.04.030

Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiO _x/Pt cell

Shin Buhm Lee, Seo Hyoung Chang, Hyang Keun Yoo, Moon Jee Yoon, Sang Mo Yang, Bo Soo Kang

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiO _x/Pt cell. For an asymmetric electrode configuration of Ti/SrTiO _x/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiO _x/Pt cell, O ₂ bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O ^2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS.

Original language	English
Pages (from-to)	1515-1517
Number of pages	3
Journal	Current Applied Physics
Volume	12
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2012.04.030
State	Published - Nov 2012

Bibliographical note

Funding Information:
This research was supported by National Research Foundation of Korea grants funded by the Korean Ministry of Education, Science and Technology (No. 2009-0080567 and No. 2010-0020416 ; B.S.K.: No. 2011-0004004 ). S.B.L. was supported by the National Research Foundation of Korea Grant funded by the Korean Government [ NRF-2011-354-C00031 ].

Keywords

Memristor
Resistance random-access memory
Resistance switching

Access to Document

10.1016/j.cap.2012.04.030

Cite this

@article{06319b558e0c42e7b20f53941bbd86ed,

title = "Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiO x/Pt cell",

abstract = "We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiO x/Pt cell. For an asymmetric electrode configuration of Ti/SrTiO x/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiO x/Pt cell, O 2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O 2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS.",

keywords = "Memristor, Resistance random-access memory, Resistance switching",

author = "Lee, {Shin Buhm} and Chang, {Seo Hyoung} and Yoo, {Hyang Keun} and Yoon, {Moon Jee} and Yang, {Sang Mo} and Kang, {Bo Soo}",

note = "Funding Information: This research was supported by National Research Foundation of Korea grants funded by the Korean Ministry of Education, Science and Technology (No. 2009-0080567 and No. 2010-0020416 ; B.S.K.: No. 2011-0004004 ). S.B.L. was supported by the National Research Foundation of Korea Grant funded by the Korean Government [ NRF-2011-354-C00031 ].",

year = "2012",

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doi = "10.1016/j.cap.2012.04.030",

language = "English",

volume = "12",

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journal = "Current Applied Physics",

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T1 - Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiO x/Pt cell

AU - Lee, Shin Buhm

AU - Chang, Seo Hyoung

AU - Yoo, Hyang Keun

AU - Yoon, Moon Jee

AU - Yang, Sang Mo

AU - Kang, Bo Soo

N1 - Funding Information: This research was supported by National Research Foundation of Korea grants funded by the Korean Ministry of Education, Science and Technology (No. 2009-0080567 and No. 2010-0020416 ; B.S.K.: No. 2011-0004004 ). S.B.L. was supported by the National Research Foundation of Korea Grant funded by the Korean Government [ NRF-2011-354-C00031 ].

PY - 2012/11

Y1 - 2012/11

N2 - We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiO x/Pt cell. For an asymmetric electrode configuration of Ti/SrTiO x/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiO x/Pt cell, O 2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O 2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS.

AB - We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiO x/Pt cell. For an asymmetric electrode configuration of Ti/SrTiO x/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiO x/Pt cell, O 2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O 2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS.

KW - Memristor

KW - Resistance random-access memory

KW - Resistance switching

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DO - 10.1016/j.cap.2012.04.030

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