Retardation of boron diffusion in SiGe alloy

Junhyeok Bang; Hanchul Kim; Joongoo Kang; Woo Jin Lee; K. J. Chang

doi:10.1016/j.physb.2007.08.145

Retardation of boron diffusion in SiGe alloy

Junhyeok Bang, Hanchul Kim, Joongoo Kang, Woo Jin Lee, K. J. Chang

Department of Physics and Chemistry

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1+ charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity.

Original language	English
Pages (from-to)	196-199
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.08.145
State	Published - 15 Dec 2007

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant No. C00007.

Keywords

Boron diffusion
Dopants
First-principle calculations
SiGe alloy

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10.1016/j.physb.2007.08.145

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title = "Retardation of boron diffusion in SiGe alloy",

abstract = "We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1+ charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity.",

keywords = "Boron diffusion, Dopants, First-principle calculations, SiGe alloy",

author = "Junhyeok Bang and Hanchul Kim and Joongoo Kang and Lee, \{Woo Jin\} and Chang, \{K. J.\}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant No. C00007.",

year = "2007",

month = dec,

day = "15",

doi = "10.1016/j.physb.2007.08.145",

language = "English",

volume = "401-402",

pages = "196--199",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Retardation of boron diffusion in SiGe alloy

AU - Bang, Junhyeok

AU - Kim, Hanchul

AU - Kang, Joongoo

AU - Lee, Woo Jin

AU - Chang, K. J.

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant No. C00007.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1+ charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity.

AB - We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1+ charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity.

KW - Boron diffusion

KW - Dopants

KW - First-principle calculations

KW - SiGe alloy

UR - https://www.scopus.com/pages/publications/36049006196

U2 - 10.1016/j.physb.2007.08.145

DO - 10.1016/j.physb.2007.08.145

M3 - Article

AN - SCOPUS:36049006196

SN - 0921-4526

VL - 401-402

SP - 196

EP - 199

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Retardation of boron diffusion in SiGe alloy

Abstract

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Keywords

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