Abstract
We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1+ charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity.
Original language | English |
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Pages (from-to) | 196-199 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 401-402 |
DOIs | |
State | Published - 15 Dec 2007 |
Bibliographical note
Funding Information:This work was supported by the Korea Research Foundation Grant No. C00007.
Keywords
- Boron diffusion
- Dopants
- First-principle calculations
- SiGe alloy