Retardation of boron diffusion in SiGe alloy

Junhyeok Bang, Hanchul Kim, Joongoo Kang, Woo Jin Lee, K. J. Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1+ charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity.

Original languageEnglish
Pages (from-to)196-199
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
StatePublished - 15 Dec 2007

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant No. C00007.

Keywords

  • Boron diffusion
  • Dopants
  • First-principle calculations
  • SiGe alloy

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