Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Inrok Hwang; Myung Jae Lee; Gyoung Ho Buh; Jieun Bae; Jinsik Choi; Jin Soo Kim; Sahwan Hong; Yeon Soo Kim; Ik Su Byun; Seung Woong Lee; Seung Eon Ahn; Bo Soo Kang; Sung Oong Kang; Bae Ho Park

doi:10.1063/1.3477953

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

Inrok Hwang, Myung Jae Lee, Gyoung Ho Buh, Jieun Bae, Jinsik Choi, Jin Soo Kim, Sahwan Hong, Yeon Soo Kim, Ik Su Byun, Seung Woong Lee, Seung Eon Ahn, Bo Soo Kang, Sung Oong Kang, Bae Ho Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10-² and 10^-4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiO_x, we have proposed a model in which the migration of oxygen ions (O^2-) is responsible for the switching transition in Pt/NiO/Pt structures.

Original language	English
Article number	052106
Journal	Applied Physics Letters
Volume	97
Issue number	5
DOIs	https://doi.org/10.1063/1.3477953
State	Published - 2 Aug 2010

Bibliographical note

Funding Information:
This work was supported by the KOSEF NRL Program grant funded by the Korea Government MEST (Grant No. R0A-2008-000-20052-0), WCU program through the KOSEF funded by the MEST (Grant No. R31-2008-000-10057-0), Nano R&D program through the KOSEF by MEST (Grant No. 2008-02557), Seoul R&BD Program (Grant No. WR090671), and KOSEF grant funded by the Korea MEST (Quantum Metamaterials Research Center, Grant No. R11-2008-053-03002-0).

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@article{9830b5d04f2d417f9a7639699bb2b93e,

title = "Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure",

abstract = "We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10-2 and 10-4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures.",

author = "Inrok Hwang and Lee, \{Myung Jae\} and Buh, \{Gyoung Ho\} and Jieun Bae and Jinsik Choi and Kim, \{Jin Soo\} and Sahwan Hong and Kim, \{Yeon Soo\} and Byun, \{Ik Su\} and Lee, \{Seung Woong\} and Ahn, \{Seung Eon\} and Kang, \{Bo Soo\} and Kang, \{Sung Oong\} and Park, \{Bae Ho\}",

note = "Funding Information: This work was supported by the KOSEF NRL Program grant funded by the Korea Government MEST (Grant No. R0A-2008-000-20052-0), WCU program through the KOSEF funded by the MEST (Grant No. R31-2008-000-10057-0), Nano R\&D program through the KOSEF by MEST (Grant No. 2008-02557), Seoul R\&BD Program (Grant No. WR090671), and KOSEF grant funded by the Korea MEST (Quantum Metamaterials Research Center, Grant No. R11-2008-053-03002-0).",

year = "2010",

month = aug,

day = "2",

doi = "10.1063/1.3477953",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

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TY - JOUR

T1 - Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

AU - Hwang, Inrok

AU - Lee, Myung Jae

AU - Buh, Gyoung Ho

AU - Bae, Jieun

AU - Choi, Jinsik

AU - Kim, Jin Soo

AU - Hong, Sahwan

AU - Kim, Yeon Soo

AU - Byun, Ik Su

AU - Lee, Seung Woong

AU - Ahn, Seung Eon

AU - Kang, Bo Soo

AU - Kang, Sung Oong

AU - Park, Bae Ho

N1 - Funding Information: This work was supported by the KOSEF NRL Program grant funded by the Korea Government MEST (Grant No. R0A-2008-000-20052-0), WCU program through the KOSEF funded by the MEST (Grant No. R31-2008-000-10057-0), Nano R&D program through the KOSEF by MEST (Grant No. 2008-02557), Seoul R&BD Program (Grant No. WR090671), and KOSEF grant funded by the Korea MEST (Quantum Metamaterials Research Center, Grant No. R11-2008-053-03002-0).

PY - 2010/8/2

Y1 - 2010/8/2

N2 - We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10-2 and 10-4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures.

AB - We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10-2 and 10-4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2-) is responsible for the switching transition in Pt/NiO/Pt structures.

UR - https://www.scopus.com/pages/publications/77955744722

U2 - 10.1063/1.3477953

DO - 10.1063/1.3477953

M3 - Article

AN - SCOPUS:77955744722

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052106

ER -

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

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