Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

Dongsoo Lee; Hyejung Choi; Hyunjun Sim; Dooho Choi; Hyunsang Hwang; Myoung Jae Lee; Sun Ae Seo; I. K. Yoo

doi:10.1109/LED.2005.854397

Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

Dongsoo Lee
, Hyejung Choi
, Hyunjun Sim
, Dooho Choi
, Hyunsang Hwang
, Myoung Jae Lee
, Sun Ae Seo
, I. K. Yoo

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO_x/p⁺-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrO_x thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO₂ layer with high resistance, transition region with medium resistance, and conducting ZrO_x bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr⁺ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow.

Original language	English
Pages (from-to)	719-721
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	10
DOIs	https://doi.org/10.1109/LED.2005.854397
State	Published - Oct 2005

Bibliographical note

Funding Information:
Manuscript received May 10, 2005; revised June 9, 2005. This work was supported in part by the Samsung Advanced Institute of Technology (SAIT) and in part by the Ministry of Science and Technology (MOST) under the National Research and Development Project. The review of this paper was arranged by Editor C.-P. Chang.

Keywords

Nonstoichiometric zirconium oxide
Resistance random access memory (RAM)
Resistive switching
Switching mechanism
Tri-layer structure
n-MOSFET

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10.1109/LED.2005.854397

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title = "Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications",

abstract = "The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrOx/p+-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrOx thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO2 layer with high resistance, transition region with medium resistance, and conducting ZrOx bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr+ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow.",

keywords = "Nonstoichiometric zirconium oxide, Resistance random access memory (RAM), Resistive switching, Switching mechanism, Tri-layer structure, n-MOSFET",

author = "Dongsoo Lee and Hyejung Choi and Hyunjun Sim and Dooho Choi and Hyunsang Hwang and Lee, \{Myoung Jae\} and Seo, \{Sun Ae\} and Yoo, \{I. K.\}",

note = "Funding Information: Manuscript received May 10, 2005; revised June 9, 2005. This work was supported in part by the Samsung Advanced Institute of Technology (SAIT) and in part by the Ministry of Science and Technology (MOST) under the National Research and Development Project. The review of this paper was arranged by Editor C.-P. Chang.",

year = "2005",

month = oct,

doi = "10.1109/LED.2005.854397",

language = "English",

volume = "26",

pages = "719--721",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

AU - Lee, Dongsoo

AU - Choi, Hyejung

AU - Sim, Hyunjun

AU - Choi, Dooho

AU - Hwang, Hyunsang

AU - Lee, Myoung Jae

AU - Seo, Sun Ae

AU - Yoo, I. K.

N1 - Funding Information: Manuscript received May 10, 2005; revised June 9, 2005. This work was supported in part by the Samsung Advanced Institute of Technology (SAIT) and in part by the Ministry of Science and Technology (MOST) under the National Research and Development Project. The review of this paper was arranged by Editor C.-P. Chang.

PY - 2005/10

Y1 - 2005/10

N2 - The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrOx/p+-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrOx thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO2 layer with high resistance, transition region with medium resistance, and conducting ZrOx bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr+ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow.

AB - The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrOx/p+-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrOx thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO2 layer with high resistance, transition region with medium resistance, and conducting ZrOx bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr+ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow.

KW - Nonstoichiometric zirconium oxide

KW - Resistance random access memory (RAM)

KW - Resistive switching

KW - Switching mechanism

KW - Tri-layer structure

KW - n-MOSFET

UR - https://www.scopus.com/pages/publications/27144444787

U2 - 10.1109/LED.2005.854397

DO - 10.1109/LED.2005.854397

M3 - Article

AN - SCOPUS:27144444787

SN - 0741-3106

VL - 26

SP - 719

EP - 721

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

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Keywords

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