Resistance switching of Al doped ZnO for Non Volatile Memory applications

Dongsoo Lee; Dae Kue Hwang; Man Chang; Yunik Son; Dong Jun Seong; Dooho Choi; Hyunsang Hwang

doi:10.1109/.2006.1629506

Resistance switching of Al doped ZnO for Non Volatile Memory applications

Dongsoo Lee
, Dae Kue Hwang
, Man Chang
, Yunik Son
, Dong Jun Seong
, Dooho Choi
, Hyunsang Hwang

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Original language	English
Title of host publication	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Pages	86-87
Number of pages	2
DOIs	https://doi.org/10.1109/.2006.1629506
State	Published - 2006
Event	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 - Monteray, CA, United States Duration: 12 Feb 2006 → 16 Feb 2006

Publication series

Name	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Volume	2006

Conference

Conference	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Country/Territory	United States
City	Monteray, CA
Period	12/02/06 → 16/02/06

Access to Document

10.1109/.2006.1629506

Cite this

Lee, D., Hwang, D. K., Chang, M., Son, Y., Seong, D. J., Choi, D., & Hwang, H. (2006). Resistance switching of Al doped ZnO for Non Volatile Memory applications. In 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 (pp. 86-87). Article 1629506 (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; Vol. 2006). https://doi.org/10.1109/.2006.1629506

@inproceedings{366b63225869436997d811c622bfb219,

title = "Resistance switching of Al doped ZnO for Non Volatile Memory applications",

author = "Dongsoo Lee and Hwang, \{Dae Kue\} and Man Chang and Yunik Son and Seong, \{Dong Jun\} and Dooho Choi and Hyunsang Hwang",

year = "2006",

doi = "10.1109/.2006.1629506",

language = "English",

isbn = "1424400260",

series = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006",

pages = "86--87",

booktitle = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006",

note = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 ; Conference date: 12-02-2006 Through 16-02-2006",

}

Lee, D, Hwang, DK, Chang, M, Son, Y, Seong, DJ, Choi, D & Hwang, H 2006, Resistance switching of Al doped ZnO for Non Volatile Memory applications. in 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006., 1629506, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006, vol. 2006, pp. 86-87, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006, Monteray, CA, United States, 12/02/06. https://doi.org/10.1109/.2006.1629506

Resistance switching of Al doped ZnO for Non Volatile Memory applications. / Lee, Dongsoo; Hwang, Dae Kue; Chang, Man et al.
21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006. 2006. p. 86-87 1629506 (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Resistance switching of Al doped ZnO for Non Volatile Memory applications

AU - Lee, Dongsoo

AU - Hwang, Dae Kue

AU - Chang, Man

AU - Son, Yunik

AU - Seong, Dong Jun

AU - Choi, Dooho

AU - Hwang, Hyunsang

PY - 2006

Y1 - 2006

UR - https://www.scopus.com/pages/publications/33751042407

U2 - 10.1109/.2006.1629506

DO - 10.1109/.2006.1629506

M3 - Conference contribution

AN - SCOPUS:33751042407

SN - 1424400260

SN - 9781424400263

T3 - 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

SP - 86

EP - 87

BT - 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

T2 - 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Y2 - 12 February 2006 through 16 February 2006

ER -

Resistance switching of Al doped ZnO for Non Volatile Memory applications

Publication series

Conference

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