Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO3(ZnO)m thin films

Dong Kyu Seo; Jun Hyeon Kim; Jae Hyun Kim; Hyung Koun Cho

doi:10.1002/sia.4990

Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO₃(ZnO)_m thin films

Dong Kyu Seo
, Jun Hyeon Kim
, Jae Hyun Kim
, Hyung Koun Cho

Division of Energy Techonology

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Thermoelectric (TE) InGaZnO thin films grown on sapphire substrates by sputtering were optimized using a radio-frequency (RF) argon plasma treatment. The oxide thin films exhibited layered InGaO₃(ZnO)₂ superlattices with excellent crystallinity by using ZnO buffer layers and a post-annealing process at 900 °C. The plasma treatment under various RF powers induced excellent improvements in the electrical conductivity without structural changes. The carrier concentration was gradually increased as the RF power increased, and as a result, the TE power factor (PF) was significantly enhanced despite the reduced Seebeck coefficient. A maximum PF value was observed to be ∼0.2 × 10^-5 at 500 K in the sample that was plasma treated at 150 W, where the carrier concentration was 4.9 × 10 ¹⁹ cm^-3.

Original language	English
Pages (from-to)	1519-1521
Number of pages	3
Journal	Surface and Interface Analysis
Volume	44
Issue number	11-12
DOIs	https://doi.org/10.1002/sia.4990
State	Published - Nov 2012

Keywords

Plasma treatment
Superlattice
Thermoelectric

Access to Document

10.1002/sia.4990

Cite this

@article{b7788f35034e4b6194c4169b2c91dc71,

title = "Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO3(ZnO)m thin films",

abstract = "Thermoelectric (TE) InGaZnO thin films grown on sapphire substrates by sputtering were optimized using a radio-frequency (RF) argon plasma treatment. The oxide thin films exhibited layered InGaO3(ZnO)2 superlattices with excellent crystallinity by using ZnO buffer layers and a post-annealing process at 900 °C. The plasma treatment under various RF powers induced excellent improvements in the electrical conductivity without structural changes. The carrier concentration was gradually increased as the RF power increased, and as a result, the TE power factor (PF) was significantly enhanced despite the reduced Seebeck coefficient. A maximum PF value was observed to be ∼0.2 × 10-5 at 500 K in the sample that was plasma treated at 150 W, where the carrier concentration was 4.9 × 10 19 cm-3.",

keywords = "Plasma treatment, Superlattice, Thermoelectric",

author = "Seo, \{Dong Kyu\} and Kim, \{Jun Hyeon\} and Kim, \{Jae Hyun\} and Cho, \{Hyung Koun\}",

year = "2012",

month = nov,

doi = "10.1002/sia.4990",

language = "English",

volume = "44",

pages = "1519--1521",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "John Wiley and Sons Ltd",

number = "11-12",

}

TY - JOUR

T1 - Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO3(ZnO)m thin films

AU - Seo, Dong Kyu

AU - Kim, Jun Hyeon

AU - Kim, Jae Hyun

AU - Cho, Hyung Koun

PY - 2012/11

Y1 - 2012/11

N2 - Thermoelectric (TE) InGaZnO thin films grown on sapphire substrates by sputtering were optimized using a radio-frequency (RF) argon plasma treatment. The oxide thin films exhibited layered InGaO3(ZnO)2 superlattices with excellent crystallinity by using ZnO buffer layers and a post-annealing process at 900 °C. The plasma treatment under various RF powers induced excellent improvements in the electrical conductivity without structural changes. The carrier concentration was gradually increased as the RF power increased, and as a result, the TE power factor (PF) was significantly enhanced despite the reduced Seebeck coefficient. A maximum PF value was observed to be ∼0.2 × 10-5 at 500 K in the sample that was plasma treated at 150 W, where the carrier concentration was 4.9 × 10 19 cm-3.

AB - Thermoelectric (TE) InGaZnO thin films grown on sapphire substrates by sputtering were optimized using a radio-frequency (RF) argon plasma treatment. The oxide thin films exhibited layered InGaO3(ZnO)2 superlattices with excellent crystallinity by using ZnO buffer layers and a post-annealing process at 900 °C. The plasma treatment under various RF powers induced excellent improvements in the electrical conductivity without structural changes. The carrier concentration was gradually increased as the RF power increased, and as a result, the TE power factor (PF) was significantly enhanced despite the reduced Seebeck coefficient. A maximum PF value was observed to be ∼0.2 × 10-5 at 500 K in the sample that was plasma treated at 150 W, where the carrier concentration was 4.9 × 10 19 cm-3.

KW - Plasma treatment

KW - Superlattice

KW - Thermoelectric

UR - https://www.scopus.com/pages/publications/84882454187

U2 - 10.1002/sia.4990

DO - 10.1002/sia.4990

M3 - Article

AN - SCOPUS:84882454187

SN - 0142-2421

VL - 44

SP - 1519

EP - 1521

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 11-12

ER -

Remarkable increase of thermoelectric power factor using plasma treatment in layered InGaO₃(ZnO)_m thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this