Reduction in high reset currents in unipolar resistance switching Pt/ SrTiOx /Pt capacitors using acceptor doping

S. B. Lee; A. Kim; J. S. Lee; S. H. Chang; H. K. Yoo; T. W. Noh; B. Kahng; M. J. Lee; C. J. Kim; B. S. Kang

doi:10.1063/1.3486460

Reduction in high reset currents in unipolar resistance switching Pt/ SrTiO_x /Pt capacitors using acceptor doping

S. B. Lee, A. Kim, J. S. Lee, S. H. Chang, H. K. Yoo, T. W. Noh, B. Kahng, M. J. Lee, C. J. Kim, B. S. Kang

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The high reset current, I_R, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce I _R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiO_x film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce I_R in SrTiO_x films by a factor of approximately 20. Our work suggests that the decrease in Icomp by carrier doping could be a viable alternative for reducing I_R in unipolar resistance switching.

Original language	English
Article number	093505
Journal	Applied Physics Letters
Volume	97
Issue number	9
DOIs	https://doi.org/10.1063/1.3486460
State	Published - 30 Aug 2010

Bibliographical note

Funding Information:
This research was supported by National Research Foundation of Korea (NRF) grants funded by the Korean Ministry of Education, Science and Technology (MEST) (Nos. 2009-0080567 and 2010-0020416). B.K. and J.S.L. were supported by the Basic Science Research Program through the NRF funded by the Korean MEST (Grant No. 2010-0015066). B.S.K. was supported by the Basic Science Research Program through the NRF funded by the Korean MEST (Grant No. 2010-0011608). S.B.L. acknowledges support from the Seoam Fellowship.

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@article{4eada8bfa6ea45c2b640693025465837,

title = "Reduction in high reset currents in unipolar resistance switching Pt/ SrTiOx /Pt capacitors using acceptor doping",

abstract = "The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce I R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease in Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.",

author = "Lee, \{S. B.\} and A. Kim and Lee, \{J. S.\} and Chang, \{S. H.\} and Yoo, \{H. K.\} and Noh, \{T. W.\} and B. Kahng and Lee, \{M. J.\} and Kim, \{C. J.\} and Kang, \{B. S.\}",

note = "Funding Information: This research was supported by National Research Foundation of Korea (NRF) grants funded by the Korean Ministry of Education, Science and Technology (MEST) (Nos. 2009-0080567 and 2010-0020416). B.K. and J.S.L. were supported by the Basic Science Research Program through the NRF funded by the Korean MEST (Grant No. 2010-0015066). B.S.K. was supported by the Basic Science Research Program through the NRF funded by the Korean MEST (Grant No. 2010-0011608). S.B.L. acknowledges support from the Seoam Fellowship.",

year = "2010",

month = aug,

day = "30",

doi = "10.1063/1.3486460",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Reduction in high reset currents in unipolar resistance switching Pt/ SrTiOx /Pt capacitors using acceptor doping

AU - Lee, S. B.

AU - Kim, A.

AU - Lee, J. S.

AU - Chang, S. H.

AU - Yoo, H. K.

AU - Noh, T. W.

AU - Kahng, B.

AU - Lee, M. J.

AU - Kim, C. J.

AU - Kang, B. S.

N1 - Funding Information: This research was supported by National Research Foundation of Korea (NRF) grants funded by the Korean Ministry of Education, Science and Technology (MEST) (Nos. 2009-0080567 and 2010-0020416). B.K. and J.S.L. were supported by the Basic Science Research Program through the NRF funded by the Korean MEST (Grant No. 2010-0015066). B.S.K. was supported by the Basic Science Research Program through the NRF funded by the Korean MEST (Grant No. 2010-0011608). S.B.L. acknowledges support from the Seoam Fellowship.

PY - 2010/8/30

Y1 - 2010/8/30

N2 - The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce I R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease in Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.

AB - The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce I R. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease in Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.

UR - https://www.scopus.com/pages/publications/77956378519

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DO - 10.1063/1.3486460

M3 - Article

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SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093505

ER -

Reduction in high reset currents in unipolar resistance switching Pt/ SrTiO_x /Pt capacitors using acceptor doping

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