Recent advances in ZnO-based light-emitting diodes

Yong Seok Choi; Jang Won Kang; Dae Kue Hwang; Seong Ju Park

doi:10.1109/TED.2009.2033769

Recent advances in ZnO-based light-emitting diodes

Yong Seok Choi, Jang Won Kang, Dae Kue Hwang, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

367 Scopus citations

Abstract

ZnO has attracted considerable attention for optical device applications because of several potential advantages over GaN, such as commercial availability of bulk single crystals and a larger exciton binding energy (∼60 meV compared with ∼25 meV for GaN). Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in light-emitting diodes (LEDs). In this paper, we summarize recent progress in ZnO-based LEDs. Physical and electrical properties, bandgap engineering, and growth of n- and p-type ZnO thin films are also reviewed.

Original language	English
Article number	5325807
Pages (from-to)	26-41
Number of pages	16
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/TED.2009.2033769
State	Published - Jan 2010

Bibliographical note

Funding Information:
Manuscript received June 16, 2009; revised September 23, 2009. First published November 10, 2009; current version published December 23, 2009. This work was supported in part by the Ministry of Knowledge Economy and the Korea Science and Engineering Foundation under Grant R17-2007-078-01000-0 funded by the Korean government and in part by the World Class University program at the Gwangju Institute of Science and Technology (GIST) under Project R31-2008-000-10026-0 funded by the Ministry of Education, Science and Technology of Korea. The review of this paper was arranged by Editor S. Pearton.

Keywords

P-type ZnO
Zinc oxide
ZnO-based light-emitting diodes (LEDs)

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10.1109/TED.2009.2033769

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abstract = "ZnO has attracted considerable attention for optical device applications because of several potential advantages over GaN, such as commercial availability of bulk single crystals and a larger exciton binding energy (∼60 meV compared with ∼25 meV for GaN). Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in light-emitting diodes (LEDs). In this paper, we summarize recent progress in ZnO-based LEDs. Physical and electrical properties, bandgap engineering, and growth of n- and p-type ZnO thin films are also reviewed.",

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Recent advances in ZnO-based light-emitting diodes

Abstract

Bibliographical note

Keywords

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