Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

Kyoung Kook Kim; Hyun Sik Kim; Dae Kue Hwang; Jae Hong Lim; Seong Ju Park

doi:10.1063/1.1591064

Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

Kyoung Kook Kim
, Hyun Sik Kim
, Dae Kue Hwang
, Jae Hong Lim
, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

675 Scopus citations

Abstract

Realization of p-type ZnO thin films on a sapphire substrate was discussed. Phosphorus doping and thermal activation of the dopant were performed. Results showed that there is a strong photoluminescence peak at 3.35 eV at 10 K.

Original language	English
Pages (from-to)	63-65
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	1
DOIs	https://doi.org/10.1063/1.1591064
State	Published - 7 Jul 2003

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10.1063/1.1591064

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@article{ae44665e108445288980734b6d3212df,

title = "Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant",

abstract = "Realization of p-type ZnO thin films on a sapphire substrate was discussed. Phosphorus doping and thermal activation of the dopant were performed. Results showed that there is a strong photoluminescence peak at 3.35 eV at 10 K.",

author = "Kim, \{Kyoung Kook\} and Kim, \{Hyun Sik\} and Hwang, \{Dae Kue\} and Lim, \{Jae Hong\} and Park, \{Seong Ju\}",

year = "2003",

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doi = "10.1063/1.1591064",

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journal = "Applied Physics Letters",

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T1 - Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

AU - Kim, Kyoung Kook

AU - Kim, Hyun Sik

AU - Hwang, Dae Kue

AU - Lim, Jae Hong

AU - Park, Seong Ju

PY - 2003/7/7

Y1 - 2003/7/7

N2 - Realization of p-type ZnO thin films on a sapphire substrate was discussed. Phosphorus doping and thermal activation of the dopant were performed. Results showed that there is a strong photoluminescence peak at 3.35 eV at 10 K.

AB - Realization of p-type ZnO thin films on a sapphire substrate was discussed. Phosphorus doping and thermal activation of the dopant were performed. Results showed that there is a strong photoluminescence peak at 3.35 eV at 10 K.

UR - https://www.scopus.com/pages/publications/0042842376

U2 - 10.1063/1.1591064

DO - 10.1063/1.1591064

M3 - Article

AN - SCOPUS:0042842376

SN - 0003-6951

VL - 83

SP - 63

EP - 65

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

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