Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes

Woong Ki Hong; Dae Kue Hwang; Il Kyu Park; Gunho Jo; Sunghoon Song; Seong Ju Park; Takhee Lee; Bong Joong Kim; Eric A. Stach

doi:10.1063/1.2748096

Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes

Woong Ki Hong, Dae Kue Hwang, Il Kyu Park, Gunho Jo, Sunghoon Song, Seong Ju Park, Takhee Lee, Bong Joong Kim, Eric A. Stach

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

The authors demonstrate the highly reproducible fabrication of n -channel depletion-mode (D -mode) and enhancement-mode (E -mode) field effect transistors (FETs) created from ZnO nanowires (NWs). ZnO NWs were grown by the vapor transport method on two different types of substrates. It was determined that the FETs created from ZnO NWs grown on an Au-coated sapphire substrate exhibited an n -channel D mode, whereas the FETs of ZnO NWs grown on an Au-catalyst-free ZnO film exhibited an n -channel E mode. This controlled fabrication of the two operation modes of ZnO NW-FETs is important for the wide application of NW-FETs in logic circuits.

Original language	English
Article number	243103
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2748096
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the Proton Accelerator User Program of Korea and the Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R01-2005-000-10815-0). Two of the authors (B.-J.K. and E.A.S.) were supported by the US NSF via NSF DMR No. 0606395. Another two authors (W.-K.H. and T.L.) thank Jung Inn Sohn for helpful discussions.

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title = "Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes",

abstract = "The authors demonstrate the highly reproducible fabrication of n -channel depletion-mode (D -mode) and enhancement-mode (E -mode) field effect transistors (FETs) created from ZnO nanowires (NWs). ZnO NWs were grown by the vapor transport method on two different types of substrates. It was determined that the FETs created from ZnO NWs grown on an Au-coated sapphire substrate exhibited an n -channel D mode, whereas the FETs of ZnO NWs grown on an Au-catalyst-free ZnO film exhibited an n -channel E mode. This controlled fabrication of the two operation modes of ZnO NW-FETs is important for the wide application of NW-FETs in logic circuits.",

author = "Hong, {Woong Ki} and Hwang, {Dae Kue} and Park, {Il Kyu} and Gunho Jo and Sunghoon Song and Park, {Seong Ju} and Takhee Lee and Kim, {Bong Joong} and Stach, {Eric A.}",

note = "Funding Information: This work was supported by the Proton Accelerator User Program of Korea and the Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R01-2005-000-10815-0). Two of the authors (B.-J.K. and E.A.S.) were supported by the US NSF via NSF DMR No. 0606395. Another two authors (W.-K.H. and T.L.) thank Jung Inn Sohn for helpful discussions.",

year = "2007",

doi = "10.1063/1.2748096",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes

AU - Hong, Woong Ki

AU - Hwang, Dae Kue

AU - Park, Il Kyu

AU - Jo, Gunho

AU - Song, Sunghoon

AU - Park, Seong Ju

AU - Lee, Takhee

AU - Kim, Bong Joong

AU - Stach, Eric A.

N1 - Funding Information: This work was supported by the Proton Accelerator User Program of Korea and the Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R01-2005-000-10815-0). Two of the authors (B.-J.K. and E.A.S.) were supported by the US NSF via NSF DMR No. 0606395. Another two authors (W.-K.H. and T.L.) thank Jung Inn Sohn for helpful discussions.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate the highly reproducible fabrication of n -channel depletion-mode (D -mode) and enhancement-mode (E -mode) field effect transistors (FETs) created from ZnO nanowires (NWs). ZnO NWs were grown by the vapor transport method on two different types of substrates. It was determined that the FETs created from ZnO NWs grown on an Au-coated sapphire substrate exhibited an n -channel D mode, whereas the FETs of ZnO NWs grown on an Au-catalyst-free ZnO film exhibited an n -channel E mode. This controlled fabrication of the two operation modes of ZnO NW-FETs is important for the wide application of NW-FETs in logic circuits.

AB - The authors demonstrate the highly reproducible fabrication of n -channel depletion-mode (D -mode) and enhancement-mode (E -mode) field effect transistors (FETs) created from ZnO nanowires (NWs). ZnO NWs were grown by the vapor transport method on two different types of substrates. It was determined that the FETs created from ZnO NWs grown on an Au-coated sapphire substrate exhibited an n -channel D mode, whereas the FETs of ZnO NWs grown on an Au-catalyst-free ZnO film exhibited an n -channel E mode. This controlled fabrication of the two operation modes of ZnO NW-FETs is important for the wide application of NW-FETs in logic circuits.

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DO - 10.1063/1.2748096

M3 - Article

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243103

ER -

Realization of highly reproducible ZnO nanowire field effect transistors with n -channel depletion and enhancement modes

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