Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric

Ji Hyuk Choi; Sung Won Lee; Jyoti Prakash Kar; Sachindra Nath Das; Joohee Jeon; Kyeong Ju Moon; Tae Il Lee; Unyong Jeong; Jae Min Myoung

doi:10.1039/c0jm01313g

Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric

Ji Hyuk Choi, Sung Won Lee, Jyoti Prakash Kar, Sachindra Nath Das, Joohee Jeon, Kyeong Ju Moon, Tae Il Lee, Unyong Jeong, Jae Min Myoung

Department of Physics and Chemistry

Yonsei University

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm² V^-1 s^-1), and a greatly enhanced on/off ratio (∼10⁴). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.

Original language	English
Pages (from-to)	7393-7397
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	20
Issue number	35
DOIs	https://doi.org/10.1039/c0jm01313g
State	Published - 21 Sep 2010

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title = "Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric",

abstract = "We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm2 V-1 s-1), and a greatly enhanced on/off ratio (∼104). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.",

author = "Choi, {Ji Hyuk} and Lee, {Sung Won} and Kar, {Jyoti Prakash} and Das, {Sachindra Nath} and Joohee Jeon and Moon, {Kyeong Ju} and Lee, {Tae Il} and Unyong Jeong and Myoung, {Jae Min}",

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T1 - Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric

AU - Choi, Ji Hyuk

AU - Lee, Sung Won

AU - Kar, Jyoti Prakash

AU - Das, Sachindra Nath

AU - Jeon, Joohee

AU - Moon, Kyeong Ju

AU - Lee, Tae Il

AU - Jeong, Unyong

AU - Myoung, Jae Min

PY - 2010/9/21

Y1 - 2010/9/21

N2 - We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm2 V-1 s-1), and a greatly enhanced on/off ratio (∼104). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.

AB - We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm2 V-1 s-1), and a greatly enhanced on/off ratio (∼104). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.

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DO - 10.1039/c0jm01313g

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JF - Journal of Materials Chemistry

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ER -

Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric

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