Random and localized resistive switching observation in Pt/NiO/Pt

Jung Bin Yun; Sejin Kim; Sunae Seo; Myoung Jae Lee; Dong Chul Kim; Seung Eon Ahn; Yongsoo Park; Jiyoung Kim; Hyunjung Shin

doi:10.1002/pssr.200701205

Random and localized resistive switching observation in Pt/NiO/Pt

Jung Bin Yun, Sejin Kim, Sunae Seo, Myoung Jae Lee, Dong Chul Kim, Seung Eon Ahn, Yongsoo Park, Jiyoung Kim, Hyunjung Shin

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano-sized (10 nm to 30 nm in diameter) conducting filamentary paths in the surface of NiO thin films during repetitive switching, current sensing-atomic force microscopy and ultra-thin (< 5 nm) Pt films as top electrodes were used. Some areas (or spots), which were assumed to be the beginning of the conducting filaments, appeared (formation) and disappeared (rupture) in a localized and random fashion during the switching and are thought to contribute to resistive memory switching.

Original language	English
Pages (from-to)	280-282
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	1
Issue number	6
DOIs	https://doi.org/10.1002/pssr.200701205
State	Published - 2007

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@article{1536485ae4504498901d10f896300484,

title = "Random and localized resistive switching observation in Pt/NiO/Pt",

abstract = "Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano-sized (10 nm to 30 nm in diameter) conducting filamentary paths in the surface of NiO thin films during repetitive switching, current sensing-atomic force microscopy and ultra-thin (< 5 nm) Pt films as top electrodes were used. Some areas (or spots), which were assumed to be the beginning of the conducting filaments, appeared (formation) and disappeared (rupture) in a localized and random fashion during the switching and are thought to contribute to resistive memory switching.",

author = "Yun, \{Jung Bin\} and Sejin Kim and Sunae Seo and Lee, \{Myoung Jae\} and Kim, \{Dong Chul\} and Ahn, \{Seung Eon\} and Yongsoo Park and Jiyoung Kim and Hyunjung Shin",

year = "2007",

doi = "10.1002/pssr.200701205",

language = "English",

volume = "1",

pages = "280--282",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - Random and localized resistive switching observation in Pt/NiO/Pt

AU - Yun, Jung Bin

AU - Kim, Sejin

AU - Seo, Sunae

AU - Lee, Myoung Jae

AU - Kim, Dong Chul

AU - Ahn, Seung Eon

AU - Park, Yongsoo

AU - Kim, Jiyoung

AU - Shin, Hyunjung

PY - 2007

Y1 - 2007

N2 - Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano-sized (10 nm to 30 nm in diameter) conducting filamentary paths in the surface of NiO thin films during repetitive switching, current sensing-atomic force microscopy and ultra-thin (< 5 nm) Pt films as top electrodes were used. Some areas (or spots), which were assumed to be the beginning of the conducting filaments, appeared (formation) and disappeared (rupture) in a localized and random fashion during the switching and are thought to contribute to resistive memory switching.

AB - Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano-sized (10 nm to 30 nm in diameter) conducting filamentary paths in the surface of NiO thin films during repetitive switching, current sensing-atomic force microscopy and ultra-thin (< 5 nm) Pt films as top electrodes were used. Some areas (or spots), which were assumed to be the beginning of the conducting filaments, appeared (formation) and disappeared (rupture) in a localized and random fashion during the switching and are thought to contribute to resistive memory switching.

UR - https://www.scopus.com/pages/publications/44349155762

U2 - 10.1002/pssr.200701205

DO - 10.1002/pssr.200701205

M3 - Article

AN - SCOPUS:44349155762

SN - 1862-6254

VL - 1

SP - 280

EP - 282

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 6

ER -

Random and localized resistive switching observation in Pt/NiO/Pt

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