Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3

Tae Wook Kim; Chang Hee Cho; Baek Hyun Kim; Seong Ju Park

doi:10.1063/1.2187434

Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH₄ and NH₃

Tae Wook Kim, Chang Hee Cho, Baek Hyun Kim, Seong Ju Park

Department of Physics and Chemistry

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

251 Scopus citations

Abstract

Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH₄ and NH₃ as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV)=1.13+13.9 d², where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH₃ plays an important role in improving the crystallinity and surface passivation of Si QDs.

Original language	English
Article number	123102
Journal	Applied Physics Letters
Volume	88
Issue number	12
DOIs	https://doi.org/10.1063/1.2187434
State	Published - 20 Mar 2006

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science and Technology through the National Research Laboratory Program on Nanophotonic Semiconductors in Korea.

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title = "Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3",

abstract = "Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH4 and NH3 as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV)=1.13+13.9 d2, where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH3 plays an important role in improving the crystallinity and surface passivation of Si QDs.",

author = "Kim, {Tae Wook} and Cho, {Chang Hee} and Kim, {Baek Hyun} and Park, {Seong Ju}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology through the National Research Laboratory Program on Nanophotonic Semiconductors in Korea.",

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T1 - Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3

AU - Kim, Tae Wook

AU - Cho, Chang Hee

AU - Kim, Baek Hyun

AU - Park, Seong Ju

N1 - Funding Information: This work was supported by the Ministry of Science and Technology through the National Research Laboratory Program on Nanophotonic Semiconductors in Korea.

PY - 2006/3/20

Y1 - 2006/3/20

N2 - Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH4 and NH3 as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV)=1.13+13.9 d2, where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH3 plays an important role in improving the crystallinity and surface passivation of Si QDs.

AB - Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH4 and NH3 as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV)=1.13+13.9 d2, where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH3 plays an important role in improving the crystallinity and surface passivation of Si QDs.

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JO - Applied Physics Letters

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Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH₄ and NH₃

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