Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS

H. K. Shon; H. J. Kang; T. E. Hong; H. S. Chang; K. J. Kim; H. K. Kim; D. W. Moon

doi:10.1016/S0169-4332(02)00693-1

Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS

H. K. Shon
, H. J. Kang
, T. E. Hong
, H. S. Chang
, K. J. Kim
, H. K. Kim
, D. W. Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

It was shown that the thickness of ultrathin gate oxides measured with low energy O ₂ ⁺ SIMS shows linear relationships with medium energy ion scattering spectroscopy (MEIS) and HRTEM results in the range of 9-2.5 nm. For quantitative N depth profiling, N profiles in ∼3 nm Si oxynitrides were measured by low energy O ₂ ⁺ and Cs ⁺ SIMS and calibrated with MEIS analysis results of the thickness and the N areal density. N SIMS profiles observed for low energy O ₂ ⁺ and Cs ⁺ SIMS showed some difference in the shape and distribution.

Original language	English
Pages (from-to)	423-426
Number of pages	4
Journal	Applied Surface Science
Volume	203-204
DOIs	https://doi.org/10.1016/S0169-4332(02)00693-1
State	Published - 15 Jan 2003

Bibliographical note

Funding Information:
This work was supported by KOSEF though ASSRC at Yonsei University, System IC 2010 Project and Korea Research Foundation Grant (KRF-2001-005-020009).

Keywords

Low energy SIMS
MEIS
N profiling
Si oxynitride

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10.1016/S0169-4332(02)00693-1

Cite this

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title = "Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS",

abstract = " It was shown that the thickness of ultrathin gate oxides measured with low energy O 2 + SIMS shows linear relationships with medium energy ion scattering spectroscopy (MEIS) and HRTEM results in the range of 9-2.5 nm. For quantitative N depth profiling, N profiles in ∼3 nm Si oxynitrides were measured by low energy O 2 + and Cs + SIMS and calibrated with MEIS analysis results of the thickness and the N areal density. N SIMS profiles observed for low energy O 2 + and Cs + SIMS showed some difference in the shape and distribution.",

keywords = "Low energy SIMS, MEIS, N profiling, Si oxynitride",

author = "Shon, \{H. K.\} and Kang, \{H. J.\} and Hong, \{T. E.\} and Chang, \{H. S.\} and Kim, \{K. J.\} and Kim, \{H. K.\} and Moon, \{D. W.\}",

note = "Funding Information: This work was supported by KOSEF though ASSRC at Yonsei University, System IC 2010 Project and Korea Research Foundation Grant (KRF-2001-005-020009).",

year = "2003",

month = jan,

day = "15",

doi = "10.1016/S0169-4332(02)00693-1",

language = "English",

volume = "203-204",

pages = "423--426",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS

AU - Shon, H. K.

AU - Kang, H. J.

AU - Hong, T. E.

AU - Chang, H. S.

AU - Kim, K. J.

AU - Kim, H. K.

AU - Moon, D. W.

N1 - Funding Information: This work was supported by KOSEF though ASSRC at Yonsei University, System IC 2010 Project and Korea Research Foundation Grant (KRF-2001-005-020009).

PY - 2003/1/15

Y1 - 2003/1/15

N2 - It was shown that the thickness of ultrathin gate oxides measured with low energy O 2 + SIMS shows linear relationships with medium energy ion scattering spectroscopy (MEIS) and HRTEM results in the range of 9-2.5 nm. For quantitative N depth profiling, N profiles in ∼3 nm Si oxynitrides were measured by low energy O 2 + and Cs + SIMS and calibrated with MEIS analysis results of the thickness and the N areal density. N SIMS profiles observed for low energy O 2 + and Cs + SIMS showed some difference in the shape and distribution.

AB - It was shown that the thickness of ultrathin gate oxides measured with low energy O 2 + SIMS shows linear relationships with medium energy ion scattering spectroscopy (MEIS) and HRTEM results in the range of 9-2.5 nm. For quantitative N depth profiling, N profiles in ∼3 nm Si oxynitrides were measured by low energy O 2 + and Cs + SIMS and calibrated with MEIS analysis results of the thickness and the N areal density. N SIMS profiles observed for low energy O 2 + and Cs + SIMS showed some difference in the shape and distribution.

KW - Low energy SIMS

KW - MEIS

KW - N profiling

KW - Si oxynitride

UR - https://www.scopus.com/pages/publications/12244310448

U2 - 10.1016/S0169-4332(02)00693-1

DO - 10.1016/S0169-4332(02)00693-1

M3 - Article

AN - SCOPUS:12244310448

SN - 0169-4332

VL - 203-204

SP - 423

EP - 426

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Quantitative depth profiling of nitrogen in ultrathin oxynitride film with low energy SIMS

Abstract

Bibliographical note

Keywords

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