Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

S. Hofmann; A. Rar; D. W. Moon; K. Yoshihara

doi:10.1116/1.1345899

Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

S. Hofmann
, A. Rar
, D. W. Moon
, K. Yoshihara

Department of New Biology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profiles of a double layer structure of AlAs in GaAs were compared to show the application of mixing-roughness-information (MRI) depth model to quantitative reconstruction of in-depth distribution of composition. Identical sputtering conditions were used to depth profile GaAs\AlAs reference sample consisting of two layers of AlAs separated by 44 monolayer of GaAs matrix. A marked nonlinearity between concentration and intensity was noticed on quantification using dimer (Al₂⁺) and trimer (Al₃⁺) ions with the main effect caused by simple mass action law probability of cluster ion formation.

Original language	English
Pages (from-to)	1111-1115
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1345899
State	Published - Jul 2001

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Hofmann, S., Rar, A., Moon, D. W., & Yoshihara, K. (2001). Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 19(4), 1111-1115. https://doi.org/10.1116/1.1345899

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title = "Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model",

abstract = "Secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profiles of a double layer structure of AlAs in GaAs were compared to show the application of mixing-roughness-information (MRI) depth model to quantitative reconstruction of in-depth distribution of composition. Identical sputtering conditions were used to depth profile GaAs\textbackslash{}AlAs reference sample consisting of two layers of AlAs separated by 44 monolayer of GaAs matrix. A marked nonlinearity between concentration and intensity was noticed on quantification using dimer (Al2+) and trimer (Al3+) ions with the main effect caused by simple mass action law probability of cluster ion formation.",

author = "S. Hofmann and A. Rar and Moon, \{D. W.\} and K. Yoshihara",

year = "2001",

month = jul,

doi = "10.1116/1.1345899",

language = "English",

volume = "19",

pages = "1111--1115",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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Hofmann, S, Rar, A, Moon, DW & Yoshihara, K 2001, 'Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 19, no. 4, pp. 1111-1115. https://doi.org/10.1116/1.1345899

Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model. / Hofmann, S.; Rar, A.; Moon, D. W. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 19, No. 4, 07.2001, p. 1111-1115.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

AU - Hofmann, S.

AU - Rar, A.

AU - Moon, D. W.

AU - Yoshihara, K.

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N2 - Secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profiles of a double layer structure of AlAs in GaAs were compared to show the application of mixing-roughness-information (MRI) depth model to quantitative reconstruction of in-depth distribution of composition. Identical sputtering conditions were used to depth profile GaAs\AlAs reference sample consisting of two layers of AlAs separated by 44 monolayer of GaAs matrix. A marked nonlinearity between concentration and intensity was noticed on quantification using dimer (Al2+) and trimer (Al3+) ions with the main effect caused by simple mass action law probability of cluster ion formation.

AB - Secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profiles of a double layer structure of AlAs in GaAs were compared to show the application of mixing-roughness-information (MRI) depth model to quantitative reconstruction of in-depth distribution of composition. Identical sputtering conditions were used to depth profile GaAs\AlAs reference sample consisting of two layers of AlAs separated by 44 monolayer of GaAs matrix. A marked nonlinearity between concentration and intensity was noticed on quantification using dimer (Al2+) and trimer (Al3+) ions with the main effect caused by simple mass action law probability of cluster ion formation.

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DO - 10.1116/1.1345899

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SN - 0734-2101

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EP - 1115

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

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