TY - JOUR
T1 - Proposed Valley Valve from Four-Channel Valley Manipulation
AU - Kim, Youngjae
AU - Lee, J. D.
N1 - Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/3/20
Y1 - 2019/3/20
N2 - Suggesting the AB-stacked bilayer WS2/MoS2 heterostructure as an ideal architecture for Berry curvature engineering, we theoretically demonstrate that it is possible to manipulate valley polarizations at K and -K valleys on each layer in a distinguishable fashion and then attempt an operation using four channels of valley manipulations, that is, four pairwise incorporations of KWS2 and (-K)WS2, KMoS2 and (-K)MoS2,KWS2 and KMoS2, and (-K)WS2 and (-K)MoS2, within a frame of the electro-optic method. Four-channel valley manipulation, which provokes varied anomalous Lorentz effects, conveys a development of multimode inverse valley Hall currents comprising two intralayer and one interlayer modes, each of which has a different nonlocal resistance. This finding proposes an alternative discipline of valley valve of valleytronics to manage a variable (multilevel) nonlocal resistance to the valley-mediated nonlocal charge current, in analogy with the spin valve of spintronics.
AB - Suggesting the AB-stacked bilayer WS2/MoS2 heterostructure as an ideal architecture for Berry curvature engineering, we theoretically demonstrate that it is possible to manipulate valley polarizations at K and -K valleys on each layer in a distinguishable fashion and then attempt an operation using four channels of valley manipulations, that is, four pairwise incorporations of KWS2 and (-K)WS2, KMoS2 and (-K)MoS2,KWS2 and KMoS2, and (-K)WS2 and (-K)MoS2, within a frame of the electro-optic method. Four-channel valley manipulation, which provokes varied anomalous Lorentz effects, conveys a development of multimode inverse valley Hall currents comprising two intralayer and one interlayer modes, each of which has a different nonlocal resistance. This finding proposes an alternative discipline of valley valve of valleytronics to manage a variable (multilevel) nonlocal resistance to the valley-mediated nonlocal charge current, in analogy with the spin valve of spintronics.
UR - http://www.scopus.com/inward/record.url?scp=85063351076&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.11.034048
DO - 10.1103/PhysRevApplied.11.034048
M3 - Article
AN - SCOPUS:85063351076
SN - 2331-7019
VL - 11
JO - Physical Review Applied
JF - Physical Review Applied
IS - 3
M1 - 034048
ER -