Properties of Cu(In,Ga)Se2 thin film solar cells on Ga temperature variation

Soon Yong Park; Eun Woo Lee; Sang Hwan Lee; Sung Ho Lee; Kwang Soo Huh; J. K. Kang; D. H. Kim; D. H. Lee; Chan Wook Jeon

doi:10.1080/15421406.2010.497091

Properties of Cu(In,Ga)Se₂ thin film solar cells on Ga temperature variation

Soon Yong Park, Eun Woo Lee, Sang Hwan Lee, Sung Ho Lee, Kwang Soo Huh, J. K. Kang, D. H. Kim, D. H. Lee, Chan Wook Jeon

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper the effect the Ga/(In+Ga) ratio, which was controlled by Ga cell temperature, on the growth behavior of Cu(In,Ga)Se₂ (CIGS) thin film and its photovoltaic performance is presented. It was found that both the grain size and the void density of CIGS layer decreased due to higher incorporation of Ga in CIGS by increasing Ga temperature. It was revealed that the CIGS films satisfying the composition ratio of Ga/(In+Ga)=0.3∼0.4 and Cu/(In+Ga)=0.84∼1.04, which were obtained at the Ga temperature of 1033∼1035°C, has the comparable diffraction intensity of (112) and (220) peaks. The (112)/(220) peak ratio of either Cu-rich or heavily Cu-poor CIGS films was found to deviate from unity and the solar cells made at these composition range showed lower photovoltaic performances. The highest efficiency of solar cell obtained by adjusting Ga cell temperature was 8.93% on device area of 0.16cm² (fill factor, open circuit voltage, and short circuit current were 50.34%, 576mV and 30.79mA/cm², respectively).

Original language	English
Pages (from-to)	8/[424]-14/[430]
Journal	Molecular Crystals and Liquid Crystals
Volume	532
DOIs	https://doi.org/10.1080/15421406.2010.497091
State	Published - 18 Oct 2010

Bibliographical note

Funding Information:
This research was carried out under the General R/D Program of the Daegu Gyeongbuk Institute of Science and Technology (DGIST), funded by the Ministry of Education, Science and Technology (MEST) of the Republic of Korea.

Keywords

Co-evaporation
solar cell
thin film
three-stage process

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Access to Document

10.1080/15421406.2010.497091

Cite this

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title = "Properties of Cu(In,Ga)Se2 thin film solar cells on Ga temperature variation",

abstract = "In this paper the effect the Ga/(In+Ga) ratio, which was controlled by Ga cell temperature, on the growth behavior of Cu(In,Ga)Se2 (CIGS) thin film and its photovoltaic performance is presented. It was found that both the grain size and the void density of CIGS layer decreased due to higher incorporation of Ga in CIGS by increasing Ga temperature. It was revealed that the CIGS films satisfying the composition ratio of Ga/(In+Ga)=0.3∼0.4 and Cu/(In+Ga)=0.84∼1.04, which were obtained at the Ga temperature of 1033∼1035°C, has the comparable diffraction intensity of (112) and (220) peaks. The (112)/(220) peak ratio of either Cu-rich or heavily Cu-poor CIGS films was found to deviate from unity and the solar cells made at these composition range showed lower photovoltaic performances. The highest efficiency of solar cell obtained by adjusting Ga cell temperature was 8.93% on device area of 0.16cm2 (fill factor, open circuit voltage, and short circuit current were 50.34%, 576mV and 30.79mA/cm2, respectively).",

keywords = "Co-evaporation, solar cell, thin film, three-stage process",

author = "Park, {Soon Yong} and Lee, {Eun Woo} and Lee, {Sang Hwan} and Lee, {Sung Ho} and Huh, {Kwang Soo} and Kang, {J. K.} and Kim, {D. H.} and Lee, {D. H.} and Jeon, {Chan Wook}",

note = "Funding Information: This research was carried out under the General R/D Program of the Daegu Gyeongbuk Institute of Science and Technology (DGIST), funded by the Ministry of Education, Science and Technology (MEST) of the Republic of Korea.",

year = "2010",

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doi = "10.1080/15421406.2010.497091",

language = "English",

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T1 - Properties of Cu(In,Ga)Se2 thin film solar cells on Ga temperature variation

AU - Park, Soon Yong

AU - Lee, Eun Woo

AU - Lee, Sang Hwan

AU - Lee, Sung Ho

AU - Huh, Kwang Soo

AU - Kang, J. K.

AU - Kim, D. H.

AU - Lee, D. H.

AU - Jeon, Chan Wook

N1 - Funding Information: This research was carried out under the General R/D Program of the Daegu Gyeongbuk Institute of Science and Technology (DGIST), funded by the Ministry of Education, Science and Technology (MEST) of the Republic of Korea.

PY - 2010/10/18

Y1 - 2010/10/18

N2 - In this paper the effect the Ga/(In+Ga) ratio, which was controlled by Ga cell temperature, on the growth behavior of Cu(In,Ga)Se2 (CIGS) thin film and its photovoltaic performance is presented. It was found that both the grain size and the void density of CIGS layer decreased due to higher incorporation of Ga in CIGS by increasing Ga temperature. It was revealed that the CIGS films satisfying the composition ratio of Ga/(In+Ga)=0.3∼0.4 and Cu/(In+Ga)=0.84∼1.04, which were obtained at the Ga temperature of 1033∼1035°C, has the comparable diffraction intensity of (112) and (220) peaks. The (112)/(220) peak ratio of either Cu-rich or heavily Cu-poor CIGS films was found to deviate from unity and the solar cells made at these composition range showed lower photovoltaic performances. The highest efficiency of solar cell obtained by adjusting Ga cell temperature was 8.93% on device area of 0.16cm2 (fill factor, open circuit voltage, and short circuit current were 50.34%, 576mV and 30.79mA/cm2, respectively).

AB - In this paper the effect the Ga/(In+Ga) ratio, which was controlled by Ga cell temperature, on the growth behavior of Cu(In,Ga)Se2 (CIGS) thin film and its photovoltaic performance is presented. It was found that both the grain size and the void density of CIGS layer decreased due to higher incorporation of Ga in CIGS by increasing Ga temperature. It was revealed that the CIGS films satisfying the composition ratio of Ga/(In+Ga)=0.3∼0.4 and Cu/(In+Ga)=0.84∼1.04, which were obtained at the Ga temperature of 1033∼1035°C, has the comparable diffraction intensity of (112) and (220) peaks. The (112)/(220) peak ratio of either Cu-rich or heavily Cu-poor CIGS films was found to deviate from unity and the solar cells made at these composition range showed lower photovoltaic performances. The highest efficiency of solar cell obtained by adjusting Ga cell temperature was 8.93% on device area of 0.16cm2 (fill factor, open circuit voltage, and short circuit current were 50.34%, 576mV and 30.79mA/cm2, respectively).

KW - Co-evaporation

KW - solar cell

KW - thin film

KW - three-stage process

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