Point defect formation on graphite surface induced by ion impact at energies near penetration threshold

H. Kang; K. H. Park; C. Kim; B. S. Shim; S. Kim; D. W. Moon

doi:10.1016/0168-583X(92)95823-A

Point defect formation on graphite surface induced by ion impact at energies near penetration threshold

H. Kang, K. H. Park, C. Kim, B. S. Shim, S. Kim, D. W. Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

It is shown that point defects are predominantly generated by irradiating low energy noble gas ions onto a graphite (0001) surface. Scanning tunneling microscopic images of the graphite surface irradiated with 50 eV Ar⁺ ions show a structure corresponding to a point defect in which only one or two surface atoms are displaced. The process of ion penetration and trapping into the graphite is investigated as a function of ion energy in the range of 1-500 eV. Trapping efficiency rapidly increases with ion energy in the threshold region (10-100 eV), and leads to a saturation for higher energies. The penetration and trapping mechanism is discussed in relation to defect formation on the surface.

Original language	English
Pages (from-to)	312-315
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	67
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(92)95823-A
State	Published - 1 Apr 1992

Bibliographical note

Funding Information:
This work was supported by the Korean Science and Engineering Foundation (1990-) and Center for Molecular Science (1991).

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10.1016/0168-583X(92)95823-A

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title = "Point defect formation on graphite surface induced by ion impact at energies near penetration threshold",

abstract = "It is shown that point defects are predominantly generated by irradiating low energy noble gas ions onto a graphite (0001) surface. Scanning tunneling microscopic images of the graphite surface irradiated with 50 eV Ar+ ions show a structure corresponding to a point defect in which only one or two surface atoms are displaced. The process of ion penetration and trapping into the graphite is investigated as a function of ion energy in the range of 1-500 eV. Trapping efficiency rapidly increases with ion energy in the threshold region (10-100 eV), and leads to a saturation for higher energies. The penetration and trapping mechanism is discussed in relation to defect formation on the surface.",

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note = "Funding Information: This work was supported by the Korean Science and Engineering Foundation (1990-) and Center for Molecular Science (1991).",

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T1 - Point defect formation on graphite surface induced by ion impact at energies near penetration threshold

AU - Kang, H.

AU - Park, K. H.

AU - Kim, C.

AU - Shim, B. S.

AU - Kim, S.

AU - Moon, D. W.

N1 - Funding Information: This work was supported by the Korean Science and Engineering Foundation (1990-) and Center for Molecular Science (1991).

PY - 1992/4/1

Y1 - 1992/4/1

N2 - It is shown that point defects are predominantly generated by irradiating low energy noble gas ions onto a graphite (0001) surface. Scanning tunneling microscopic images of the graphite surface irradiated with 50 eV Ar+ ions show a structure corresponding to a point defect in which only one or two surface atoms are displaced. The process of ion penetration and trapping into the graphite is investigated as a function of ion energy in the range of 1-500 eV. Trapping efficiency rapidly increases with ion energy in the threshold region (10-100 eV), and leads to a saturation for higher energies. The penetration and trapping mechanism is discussed in relation to defect formation on the surface.

AB - It is shown that point defects are predominantly generated by irradiating low energy noble gas ions onto a graphite (0001) surface. Scanning tunneling microscopic images of the graphite surface irradiated with 50 eV Ar+ ions show a structure corresponding to a point defect in which only one or two surface atoms are displaced. The process of ion penetration and trapping into the graphite is investigated as a function of ion energy in the range of 1-500 eV. Trapping efficiency rapidly increases with ion energy in the threshold region (10-100 eV), and leads to a saturation for higher energies. The penetration and trapping mechanism is discussed in relation to defect formation on the surface.

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SN - 0168-583X

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Point defect formation on graphite surface induced by ion impact at energies near penetration threshold

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