Phosphorus doped Zn 1-xMg xO nanowire arrays

S. S. Lin; J. I. Hong; J. H. Song; Y. Zhu; H. P. He; Z. Xu; Y. G. Wei; Y. Ding; R. L. Snyder; Z. L. Wang

doi:10.1021/nl902067a

Phosphorus doped Zn _1-xMg _xO nanowire arrays

S. S. Lin, J. I. Hong, J. H. Song, Y. Zhu, H. P. He, Z. Xu, Y. G. Wei, Y. Ding, R. L. Snyder, Z. L. Wang

Department of Physics and Chemistry

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Abstract

We demonstrate the growth of phosphorus doped Zn _1-xMg _xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn _0.92Mg _0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.

Original language	English
Pages (from-to)	3877-3882
Number of pages	6
Journal	Nano Letters
Volume	9
Issue number	11
DOIs	https://doi.org/10.1021/nl902067a
State	Published - 11 Dec 2009

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10.1021/nl902067a

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title = "Phosphorus doped Zn 1-xMg xO nanowire arrays",

abstract = "We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.",

author = "Lin, \{S. S.\} and Hong, \{J. I.\} and Song, \{J. H.\} and Y. Zhu and He, \{H. P.\} and Z. Xu and Wei, \{Y. G.\} and Y. Ding and Snyder, \{R. L.\} and Wang, \{Z. L.\}",

year = "2009",

month = dec,

day = "11",

doi = "10.1021/nl902067a",

language = "English",

volume = "9",

pages = "3877--3882",

journal = "Nano Letters",

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TY - JOUR

T1 - Phosphorus doped Zn 1-xMg xO nanowire arrays

AU - Lin, S. S.

AU - Hong, J. I.

AU - Song, J. H.

AU - Zhu, Y.

AU - He, H. P.

AU - Xu, Z.

AU - Wei, Y. G.

AU - Ding, Y.

AU - Snyder, R. L.

AU - Wang, Z. L.

PY - 2009/12/11

Y1 - 2009/12/11

N2 - We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.

AB - We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of ∼140 meV Is identified by temperaturedependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application In high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.

UR - https://www.scopus.com/pages/publications/72849110660

U2 - 10.1021/nl902067a

DO - 10.1021/nl902067a

M3 - Article

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SN - 1530-6984

VL - 9

SP - 3877

EP - 3882

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Phosphorus doped Zn _1-xMg _xO nanowire arrays

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