P -ZnO/ n -GaN heterostructure ZnO light-emitting diodes

Dae Kue Hwang; Soon Hyung Kang; Jae Hong Lim; Eun Jeong Yang; Jin Yong Oh; Jin Ho Yang; Seong Ju Park

doi:10.1063/1.1940736

P -ZnO/ n -GaN heterostructure ZnO light-emitting diodes

Dae Kue Hwang, Soon Hyung Kang, Jae Hong Lim, Eun Jeong Yang, Jin Yong Oh, Jin Ho Yang, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

352 Scopus citations

Abstract

We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p -ZnO/ n -GaN. The LED structure consisted of a phosphorus doped p -ZnO film with a hole concentration of 6.68×1017 cm-3 and a Si-doped n -GaN film with an electron concentration of 1.1×1018 cm-3. The I-V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p -ZnO which was reduced as the result of the band offset at the interface of p -ZnO and n -GaN.

Original language	English
Article number	222101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	22
DOIs	https://doi.org/10.1063/1.1940736
State	Published - 2005

Bibliographical note

Funding Information:
This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea and the Air Force Office of Science Research (AOARD-04-4014) in the USA.

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title = "P -ZnO/ n -GaN heterostructure ZnO light-emitting diodes",

abstract = "We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p -ZnO/ n -GaN. The LED structure consisted of a phosphorus doped p -ZnO film with a hole concentration of 6.68×1017 cm-3 and a Si-doped n -GaN film with an electron concentration of 1.1×1018 cm-3. The I-V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p -ZnO which was reduced as the result of the band offset at the interface of p -ZnO and n -GaN.",

author = "Hwang, {Dae Kue} and Kang, {Soon Hyung} and Lim, {Jae Hong} and Yang, {Eun Jeong} and Oh, {Jin Yong} and Yang, {Jin Ho} and Park, {Seong Ju}",

note = "Funding Information: This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea and the Air Force Office of Science Research (AOARD-04-4014) in the USA.",

year = "2005",

doi = "10.1063/1.1940736",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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T1 - P -ZnO/ n -GaN heterostructure ZnO light-emitting diodes

AU - Hwang, Dae Kue

AU - Kang, Soon Hyung

AU - Lim, Jae Hong

AU - Yang, Eun Jeong

AU - Oh, Jin Yong

AU - Yang, Jin Ho

AU - Park, Seong Ju

N1 - Funding Information: This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea and the Air Force Office of Science Research (AOARD-04-4014) in the USA.

PY - 2005

Y1 - 2005

N2 - We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p -ZnO/ n -GaN. The LED structure consisted of a phosphorus doped p -ZnO film with a hole concentration of 6.68×1017 cm-3 and a Si-doped n -GaN film with an electron concentration of 1.1×1018 cm-3. The I-V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p -ZnO which was reduced as the result of the band offset at the interface of p -ZnO and n -GaN.

AB - We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p -ZnO/ n -GaN. The LED structure consisted of a phosphorus doped p -ZnO film with a hole concentration of 6.68×1017 cm-3 and a Si-doped n -GaN film with an electron concentration of 1.1×1018 cm-3. The I-V of the LED showed a threshold voltage of 5.4 V and an electroluminescence (EL) emission of 409 nm at room temperature. The EL emission peak at 409 nm was attributed to the band gap of p -ZnO which was reduced as the result of the band offset at the interface of p -ZnO and n -GaN.

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DO - 10.1063/1.1940736

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

P -ZnO/ n -GaN heterostructure ZnO light-emitting diodes

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