Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films

S. B. Lee; K. Kim; J. S. Oh; B. Kahng; J. S. Lee

doi:10.1063/1.4790842

Origin of variation in switching voltages in threshold-switching phenomena of VO₂ thin films

S. B. Lee, K. Kim, J. S. Oh, B. Kahng, J. S. Lee

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We investigated the origin of the variation in switching voltages in threshold-switching of VO₂ thin films. When a triangular-waveform voltage signal was applied, the current changed abruptly at two switching voltages, i.e., V_ON (insulator-to-metal) and V_OFF (metal-to-insulator). V_ON and V_OFF were measured by changing the period of the voltage signal, the temperature of the environment, and the load resistance. We observed that either V_ON or V _OFF varied significantly and had different dependences with respect to the external parameters. Based on the mechanism of the metal-insulator transition induced by Joule heating, numerical simulations were performed, which quantitatively reproduced all of the experimental results. From the simulation analysis, the variation in the switching voltages for threshold-switching was determined to be thermal in origin.

Original language	English
Article number	063501
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4790842
State	Published - 11 Feb 2013

Bibliographical note

Funding Information:
This work was supported by the Research Center Program of Institute for Basic Science [Grant No. EMI203] and the National Research Foundation [Grant Nos. (B.K.) 2010-0015066 and (J.S.L.) Grant No. NRF-2011-35B-C00014] in Korea.

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title = "Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films",

abstract = "We investigated the origin of the variation in switching voltages in threshold-switching of VO2 thin films. When a triangular-waveform voltage signal was applied, the current changed abruptly at two switching voltages, i.e., VON (insulator-to-metal) and VOFF (metal-to-insulator). VON and VOFF were measured by changing the period of the voltage signal, the temperature of the environment, and the load resistance. We observed that either VON or V OFF varied significantly and had different dependences with respect to the external parameters. Based on the mechanism of the metal-insulator transition induced by Joule heating, numerical simulations were performed, which quantitatively reproduced all of the experimental results. From the simulation analysis, the variation in the switching voltages for threshold-switching was determined to be thermal in origin.",

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note = "Funding Information: This work was supported by the Research Center Program of Institute for Basic Science [Grant No. EMI203] and the National Research Foundation [Grant Nos. (B.K.) 2010-0015066 and (J.S.L.) Grant No. NRF-2011-35B-C00014] in Korea.",

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AU - Lee, S. B.

AU - Kim, K.

AU - Oh, J. S.

AU - Kahng, B.

AU - Lee, J. S.

N1 - Funding Information: This work was supported by the Research Center Program of Institute for Basic Science [Grant No. EMI203] and the National Research Foundation [Grant Nos. (B.K.) 2010-0015066 and (J.S.L.) Grant No. NRF-2011-35B-C00014] in Korea.

PY - 2013/2/11

Y1 - 2013/2/11

N2 - We investigated the origin of the variation in switching voltages in threshold-switching of VO2 thin films. When a triangular-waveform voltage signal was applied, the current changed abruptly at two switching voltages, i.e., VON (insulator-to-metal) and VOFF (metal-to-insulator). VON and VOFF were measured by changing the period of the voltage signal, the temperature of the environment, and the load resistance. We observed that either VON or V OFF varied significantly and had different dependences with respect to the external parameters. Based on the mechanism of the metal-insulator transition induced by Joule heating, numerical simulations were performed, which quantitatively reproduced all of the experimental results. From the simulation analysis, the variation in the switching voltages for threshold-switching was determined to be thermal in origin.

AB - We investigated the origin of the variation in switching voltages in threshold-switching of VO2 thin films. When a triangular-waveform voltage signal was applied, the current changed abruptly at two switching voltages, i.e., VON (insulator-to-metal) and VOFF (metal-to-insulator). VON and VOFF were measured by changing the period of the voltage signal, the temperature of the environment, and the load resistance. We observed that either VON or V OFF varied significantly and had different dependences with respect to the external parameters. Based on the mechanism of the metal-insulator transition induced by Joule heating, numerical simulations were performed, which quantitatively reproduced all of the experimental results. From the simulation analysis, the variation in the switching voltages for threshold-switching was determined to be thermal in origin.

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DO - 10.1063/1.4790842

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VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063501

ER -

Origin of variation in switching voltages in threshold-switching phenomena of VO₂ thin films

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