Abstract
In recent years, indium zinc tin oxide (IZTO) thin films have been assessed as alternative materials for the commonly used indium tin oxide (ITO) with comparable electrical and optical properties for transparent electrode applications. In addition, IZTO films with a lower indium content of up to 40 at.% was found to have a high work function, which is beneficial for OPV applications. This finding raised expectations for OPV cells with IZTO films to bring higher efficiency. In this study, OPV cells were fabricated with two different structures, i.e., conventional and inverted structures, where IZTO films were used as the anode and cathode, respectively. The IZTO films were deposited at 400 °C or at room temperature with an average thickness of approximately 150 nm by RF magnetron sputtering. The improvement of the photoelectric conversion efficiency of the fabricated OPV cells is discussed in detail.
Original language | English |
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Pages (from-to) | 4292-4296 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 17 |
Issue number | 6 |
DOIs | |
State | Published - 2017 |
Bibliographical note
Publisher Copyright:© Copyright 2017 American Scientific Publishers.
Keywords
- Indium zinc tin oxide
- Non-stoichiometric
- Organic photovoltaics
- Transparent conducting oxide