Ordering-enhanced dislocation glide in III-V alloys

William E. McMahon, Joongoo Kang, Ryan M. France, Andrew G. Norman, Daniel J. Friedman, Su Huai Wei

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Ordering-induced effects on dislocations in metallic alloys have been extensively studied due to their importance in technology applications. We demonstrate that dislocation behavior in ordered III-V semiconductor alloys can be drastically different. This is because ordering in bulk metallic alloys is generally stable, whereas the surface-stabilized group-III sublattice ordering of a III-V alloy is only metastable in the bulk. Here, we show that dislocation glide can release some of the energy stored by ordering of III-V alloys, enhancing the glide of any dislocation which cuts through the ordered layers to create an antiphase boundary in the ordering pattern. This leads to an experimentally observed glide-plane switch which is unique to ordered III-V alloys. Implications for other unique strain-relaxation processes in III-V ordered alloys are also discussed.

Original languageEnglish
Article number203506
JournalJournal of Applied Physics
Volume114
Issue number20
DOIs
StatePublished - 28 Nov 2013

Bibliographical note

Funding Information:
This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08-GO28308 with the National Renewable Energy Laboratory. The authors would also like to acknowledge Waldo Olavarría for the growth of the samples used in this study.

Fingerprint

Dive into the research topics of 'Ordering-enhanced dislocation glide in III-V alloys'. Together they form a unique fingerprint.

Cite this