Abstract
Ordering-induced effects on dislocations in metallic alloys have been extensively studied due to their importance in technology applications. We demonstrate that dislocation behavior in ordered III-V semiconductor alloys can be drastically different. This is because ordering in bulk metallic alloys is generally stable, whereas the surface-stabilized group-III sublattice ordering of a III-V alloy is only metastable in the bulk. Here, we show that dislocation glide can release some of the energy stored by ordering of III-V alloys, enhancing the glide of any dislocation which cuts through the ordered layers to create an antiphase boundary in the ordering pattern. This leads to an experimentally observed glide-plane switch which is unique to ordered III-V alloys. Implications for other unique strain-relaxation processes in III-V ordered alloys are also discussed.
Original language | English |
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Article number | 203506 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 20 |
DOIs | |
State | Published - 28 Nov 2013 |
Bibliographical note
Funding Information:This work was supported by the U.S. Department of Energy under Contract No. DE-AC36-08-GO28308 with the National Renewable Energy Laboratory. The authors would also like to acknowledge Waldo Olavarría for the growth of the samples used in this study.