Optimization of the multilayer structures for a high field-sensitivity biochip sensor based on the planar Hall effect

Tran Quang Hung; Sunjong Oh; S. Anandakumar; Jong Ryul Jeong; Dong Yong Kim; Cheolgi Kim

doi:10.1109/TMAG.2009.2023426

Optimization of the multilayer structures for a high field-sensitivity biochip sensor based on the planar Hall effect

Tran Quang Hung, Sunjong Oh, S. Anandakumar, Jong Ryul Jeong, Dong Yong Kim, Cheolgi Kim

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/ Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/ IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 μV Oe^-1 5 μV Oe^-1, and 12 μV Oe^-1 respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials.

Original language	English
Article number	5257330
Pages (from-to)	4518-4521
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2009.2023426
State	Published - Oct 2009

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported in part by the Ministry of Education, Science and Technology (R32-20026) of Korea, in part by KOSEF under Project Number M10803001427-08M0300-42710, in part by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and in part by the Korea Research Foundation (KRF-2008-331-D00234).

Keywords

Biomagnetics
High-field sensitivity
Planar Hall effect (PHE) sensor

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10.1109/TMAG.2009.2023426

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title = "Optimization of the multilayer structures for a high field-sensitivity biochip sensor based on the planar Hall effect",

abstract = "We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/ Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/ IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 μV Oe-1 5 μV Oe-1, and 12 μV Oe-1 respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials.",

keywords = "Biomagnetics, High-field sensitivity, Planar Hall effect (PHE) sensor",

author = "Hung, {Tran Quang} and Sunjong Oh and S. Anandakumar and Jeong, {Jong Ryul} and Kim, {Dong Yong} and Cheolgi Kim",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Ministry of Education, Science and Technology (R32-20026) of Korea, in part by KOSEF under Project Number M10803001427-08M0300-42710, in part by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and in part by the Korea Research Foundation (KRF-2008-331-D00234).",

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AU - Oh, Sunjong

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AU - Jeong, Jong Ryul

AU - Kim, Dong Yong

AU - Kim, Cheolgi

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Ministry of Education, Science and Technology (R32-20026) of Korea, in part by KOSEF under Project Number M10803001427-08M0300-42710, in part by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and in part by the Korea Research Foundation (KRF-2008-331-D00234).

PY - 2009/10

Y1 - 2009/10

N2 - We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/ Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/ IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 μV Oe-1 5 μV Oe-1, and 12 μV Oe-1 respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials.

AB - We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/ Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/ IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 μV Oe-1 5 μV Oe-1, and 12 μV Oe-1 respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials.

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KW - High-field sensitivity

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Optimization of the multilayer structures for a high field-sensitivity biochip sensor based on the planar Hall effect

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Keywords

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