Optimization of spin-valve structure NiFe/Cu/NiFe/IrMn for planar hall effect based biochips

Bui Dinh Tu; Le Viet Cuong; Tran Quang Hung; Do Thi Huong Giang; Tran Mau Danh; Nguyen Huu Duc; Cheol Gi Kim

doi:10.1109/TMAG.2009.2018580

Optimization of spin-valve structure NiFe/Cu/NiFe/IrMn for planar hall effect based biochips

Bui Dinh Tu, Le Viet Cuong, Tran Quang Hung, Do Thi Huong Giang, Tran Mau Danh, Nguyen Huu Duc, Cheol Gi Kim

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(t _F)/Cu(1.2)/NiFe(t_p)/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 μm×50μm junctions with various thicknesses of free layer (t_F = 4, 8, 10, 12, 16, 26 nm) and pinned layer (t_p = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity S of 196 μV/(kA/m) is obtained in the spin-valve configuration with t_F = 26 nm and t_p = 1 nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.

Original language	English
Article number	4957761
Pages (from-to)	2378-2382
Number of pages	5
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2009.2018580
State	Published - Jun 2009

Bibliographical note

Funding Information:
This work was supported by Vietnam National University, Hanoi under Grant QG.TD 07.10.

Keywords

Biosensors
Hall effect
Magnetization reversal
Magnetoresistance
Magnetoresistive devices

Access to Document

10.1109/TMAG.2009.2018580

Cite this

@article{319985b4d42d4cd6a4e3346b5ee3b33f,

title = "Optimization of spin-valve structure NiFe/Cu/NiFe/IrMn for planar hall effect based biochips",

abstract = "This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(t F)/Cu(1.2)/NiFe(tp)/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 μm×50μm junctions with various thicknesses of free layer (tF = 4, 8, 10, 12, 16, 26 nm) and pinned layer (tp = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity S of 196 μV/(kA/m) is obtained in the spin-valve configuration with tF = 26 nm and tp = 1 nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.",

keywords = "Biosensors, Hall effect, Magnetization reversal, Magnetoresistance, Magnetoresistive devices",

author = "Tu, {Bui Dinh} and Cuong, {Le Viet} and Hung, {Tran Quang} and Giang, {Do Thi Huong} and Danh, {Tran Mau} and Duc, {Nguyen Huu} and Kim, {Cheol Gi}",

note = "Funding Information: This work was supported by Vietnam National University, Hanoi under Grant QG.TD 07.10.",

year = "2009",

month = jun,

doi = "10.1109/TMAG.2009.2018580",

language = "English",

volume = "45",

pages = "2378--2382",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Optimization of spin-valve structure NiFe/Cu/NiFe/IrMn for planar hall effect based biochips

AU - Tu, Bui Dinh

AU - Cuong, Le Viet

AU - Hung, Tran Quang

AU - Giang, Do Thi Huong

AU - Danh, Tran Mau

AU - Duc, Nguyen Huu

AU - Kim, Cheol Gi

N1 - Funding Information: This work was supported by Vietnam National University, Hanoi under Grant QG.TD 07.10.

PY - 2009/6

Y1 - 2009/6

N2 - This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(t F)/Cu(1.2)/NiFe(tp)/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 μm×50μm junctions with various thicknesses of free layer (tF = 4, 8, 10, 12, 16, 26 nm) and pinned layer (tp = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity S of 196 μV/(kA/m) is obtained in the spin-valve configuration with tF = 26 nm and tp = 1 nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.

AB - This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(t F)/Cu(1.2)/NiFe(tp)/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 μm×50μm junctions with various thicknesses of free layer (tF = 4, 8, 10, 12, 16, 26 nm) and pinned layer (tp = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker free layers, the higher PHE signal is observed. In addition, the thicker pinned layers lower PHE signal. The highest PHE sensitivity S of 196 μV/(kA/m) is obtained in the spin-valve configuration with tF = 26 nm and tp = 1 nm. The results are discussed in terms of the spin twist as well as to the coherent rotation of the magnetization in the individual ferromagnetic layers. This optimization is rather promising for the spintronic biochip developments.

KW - Biosensors

KW - Hall effect

KW - Magnetization reversal

KW - Magnetoresistance

KW - Magnetoresistive devices

UR - http://www.scopus.com/inward/record.url?scp=66549118321&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2009.2018580

DO - 10.1109/TMAG.2009.2018580

M3 - Article

AN - SCOPUS:66549118321

SN - 0018-9464

VL - 45

SP - 2378

EP - 2382

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

M1 - 4957761

ER -

Optimization of spin-valve structure NiFe/Cu/NiFe/IrMn for planar hall effect based biochips

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this