Optimization of planar hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

D. Y. Kim; B. S. Park; C. G. Kim

doi:10.1063/1.1289077

Optimization of planar hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

D. Y. Kim, B. S. Park, C. G. Kim

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, R_xy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current I_x. for the sensing current I_y to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (H_ex) induced by the antiferromagnetic NiO layer.

Original language	English
Pages (from-to)	3490-3494
Number of pages	5
Journal	Journal of Applied Physics
Volume	88
Issue number	6
DOIs	https://doi.org/10.1063/1.1289077
State	Published - Sep 2000

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title = "Optimization of planar hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity",

abstract = "We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix. for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer.",

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AU - Park, B. S.

AU - Kim, C. G.

PY - 2000/9

Y1 - 2000/9

N2 - We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix. for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer.

AB - We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix. for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer.

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Optimization of planar hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

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