Optical study of SiO2/nanocrystalline-Si multilayers using ellipsometry

Kang Joo Lee; Tae Dong Kang; Hosun Lee; Seung Hui Hong; Suk Ho Choi; Kyung Joong Kim; Dae Won Moon

doi:10.1557/proc-817-l4.4

Optical study of SiO₂/nanocrystalline-Si multilayers using ellipsometry

Kang Joo Lee, Tae Dong Kang, Hosun Lee, Seung Hui Hong, Suk Ho Choi, Kyung Joong Kim, Dae Won Moon

Department of New Biology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO₂/ SiO_x multilayers (MLs). The SiO₂(2nm)/SiO_x(2nm) MLs have been prepared under various deposition temperature by ion beam sputtering. The annealing at temperatures ≥ 1100°C leads to the formation of Si nanocrystals (nc-Si) in the SiO_x layer of MLs. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentzian lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO₂/nc-Si MLs as a mixture of nc-Si and SiO₂. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiO_x layer. This result is compared to expected nc-Si volume fraction, which was estimated from stoichiometry of SiO_x.

Original language	English
Pages (from-to)	127-132
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	817
DOIs	https://doi.org/10.1557/proc-817-l4.4
State	Published - 2004
Event	New Materials for Microphotonics - San Francisco, CA, United States Duration: 13 Apr 2004 → 15 Apr 2004

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@article{42421793ee9842629417e26b2d8817e2,

title = "Optical study of SiO2/nanocrystalline-Si multilayers using ellipsometry",

abstract = "Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various deposition temperature by ion beam sputtering. The annealing at temperatures ≥ 1100°C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of MLs. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentzian lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si MLs as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which was estimated from stoichiometry of SiOx.",

author = "Lee, {Kang Joo} and Kang, {Tae Dong} and Hosun Lee and Hong, {Seung Hui} and Choi, {Suk Ho} and Kim, {Kyung Joong} and Moon, {Dae Won}",

year = "2004",

doi = "10.1557/proc-817-l4.4",

language = "English",

volume = "817",

pages = "127--132",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "New Materials for Microphotonics ; Conference date: 13-04-2004 Through 15-04-2004",

}

TY - JOUR

T1 - Optical study of SiO2/nanocrystalline-Si multilayers using ellipsometry

AU - Lee, Kang Joo

AU - Kang, Tae Dong

AU - Lee, Hosun

AU - Hong, Seung Hui

AU - Choi, Suk Ho

AU - Kim, Kyung Joong

AU - Moon, Dae Won

PY - 2004

Y1 - 2004

N2 - Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various deposition temperature by ion beam sputtering. The annealing at temperatures ≥ 1100°C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of MLs. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentzian lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si MLs as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which was estimated from stoichiometry of SiOx.

AB - Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/ SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various deposition temperature by ion beam sputtering. The annealing at temperatures ≥ 1100°C leads to the formation of Si nanocrystals (nc-Si) in the SiOx layer of MLs. Transmission electron microscopy images clearly demonstrate the existence of nc-Si. We assume a Tauc-Lorentzian lineshape for the dielectric function of nc-Si, and use an effective medium approximation for SiO2/nc-Si MLs as a mixture of nc-Si and SiO2. We successfully estimate the dielectric function of nc-Si and its volume fraction. We find that the volume fraction of nc-Si decreases after annealing, with increasing x in as-deposited SiOx layer. This result is compared to expected nc-Si volume fraction, which was estimated from stoichiometry of SiOx.

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U2 - 10.1557/proc-817-l4.4

DO - 10.1557/proc-817-l4.4

M3 - Conference article

AN - SCOPUS:5544297890

SN - 0272-9172

VL - 817

SP - 127

EP - 132

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - New Materials for Microphotonics

Y2 - 13 April 2004 through 15 April 2004

ER -

Optical study of SiO₂/nanocrystalline-Si multilayers using ellipsometry

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