Nucleation behavior of atomic layer deposited SiO2 for Hf-silicate films

Kwun Bum Chung; W. J. Lee; C. Y. Kim; Mann Ho Cho; Dae Won Moon

doi:10.1149/1.3098496

Nucleation behavior of atomic layer deposited SiO₂ for Hf-silicate films

Kwun Bum Chung, W. J. Lee, C. Y. Kim, Mann Ho Cho, Dae Won Moon

Department of New Biology

Research output: Contribution to journal › Article › peer-review

Abstract

The nucleation and growth of SiO₂, as a function of surface condition, was investigated using in situ medium-energy ion-scattering analysis. The amount of SiO₂ required for saturation on the thermal oxide and on the chemical oxide was found to be 0.75 and 3.84 × 10¹⁴ Si/cm², respectively. The growth of SiO₂ on the initial HfO₂ surface increased as a function of HfO₂ coverage and growth when the HfO₂ coverage over 1 monolayer (ML) becomes saturated when the coverage of SiO₂ is ∼7 × 10¹⁴ Si/cm², which corresponds to a coverage of 1 ML SiO₂. The nucleation of SiO₂ greatly depends on the initial surface conditions. In addition, the nucleation of SiO₂ has a tendency to become saturated, regardless of the initial surface conditions.

Original language	English
Pages (from-to)	G43-G47
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	5
DOIs	https://doi.org/10.1149/1.3098496
State	Published - 2009

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title = "Nucleation behavior of atomic layer deposited SiO2 for Hf-silicate films",

abstract = "The nucleation and growth of SiO2, as a function of surface condition, was investigated using in situ medium-energy ion-scattering analysis. The amount of SiO2 required for saturation on the thermal oxide and on the chemical oxide was found to be 0.75 and 3.84 × 1014 Si/cm2, respectively. The growth of SiO2 on the initial HfO2 surface increased as a function of HfO2 coverage and growth when the HfO2 coverage over 1 monolayer (ML) becomes saturated when the coverage of SiO2 is ∼7 × 1014 Si/cm2, which corresponds to a coverage of 1 ML SiO2. The nucleation of SiO2 greatly depends on the initial surface conditions. In addition, the nucleation of SiO2 has a tendency to become saturated, regardless of the initial surface conditions.",

author = "Chung, {Kwun Bum} and Lee, {W. J.} and Kim, {C. Y.} and Cho, {Mann Ho} and Moon, {Dae Won}",

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T1 - Nucleation behavior of atomic layer deposited SiO2 for Hf-silicate films

AU - Chung, Kwun Bum

AU - Lee, W. J.

AU - Kim, C. Y.

AU - Cho, Mann Ho

AU - Moon, Dae Won

PY - 2009

Y1 - 2009

N2 - The nucleation and growth of SiO2, as a function of surface condition, was investigated using in situ medium-energy ion-scattering analysis. The amount of SiO2 required for saturation on the thermal oxide and on the chemical oxide was found to be 0.75 and 3.84 × 1014 Si/cm2, respectively. The growth of SiO2 on the initial HfO2 surface increased as a function of HfO2 coverage and growth when the HfO2 coverage over 1 monolayer (ML) becomes saturated when the coverage of SiO2 is ∼7 × 1014 Si/cm2, which corresponds to a coverage of 1 ML SiO2. The nucleation of SiO2 greatly depends on the initial surface conditions. In addition, the nucleation of SiO2 has a tendency to become saturated, regardless of the initial surface conditions.

AB - The nucleation and growth of SiO2, as a function of surface condition, was investigated using in situ medium-energy ion-scattering analysis. The amount of SiO2 required for saturation on the thermal oxide and on the chemical oxide was found to be 0.75 and 3.84 × 1014 Si/cm2, respectively. The growth of SiO2 on the initial HfO2 surface increased as a function of HfO2 coverage and growth when the HfO2 coverage over 1 monolayer (ML) becomes saturated when the coverage of SiO2 is ∼7 × 1014 Si/cm2, which corresponds to a coverage of 1 ML SiO2. The nucleation of SiO2 greatly depends on the initial surface conditions. In addition, the nucleation of SiO2 has a tendency to become saturated, regardless of the initial surface conditions.

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Nucleation behavior of atomic layer deposited SiO₂ for Hf-silicate films

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