Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density

A novel device structure is developed, which uses easy-to-grow nano scaffold fi lms to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability.