Nanotube based vertical nano-devices for high integration density

J. E. Jang; S. N. Cha; Y. Choi; D. J. Kang; T. P. Butler; D. G. Hasko; J. E. Jung; J. M. Kim; G. A.J. Amaratunga

doi:10.1109/NANOEL.2006.1609695

Nanotube based vertical nano-devices for high integration density

J. E. Jang
, S. N. Cha
, Y. Choi
, D. J. Kang
, T. P. Butler
, D. G. Hasko
, J. E. Jung
, J. M. Kim
, G. A.J. Amaratunga

Department of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.

Original language	English
Title of host publication	NanoSingapore 2006
Subtitle of host publication	IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages	89-92
Number of pages	4
DOIs	https://doi.org/10.1109/NANOEL.2006.1609695
State	Published - 2006
Event	2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore Duration: 10 Jan 2006 → 13 Jan 2006

Publication series

Name	NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Volume	2006

Conference

Conference	2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Country/Territory	Singapore
City	Singapore
Period	10/01/06 → 13/01/06

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10.1109/NANOEL.2006.1609695

Cite this

Jang, J. E., Cha, S. N., Choi, Y., Kang, D. J., Butler, T. P., Hasko, D. G., Jung, J. E., Kim, J. M., & Amaratunga, G. A. J. (2006). Nanotube based vertical nano-devices for high integration density. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (pp. 89-92). Article 1609695 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006). https://doi.org/10.1109/NANOEL.2006.1609695

@inproceedings{0e62f65af31b418b9b75d4f52f20af13,

title = "Nanotube based vertical nano-devices for high integration density",

abstract = "Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.",

author = "Jang, \{J. E.\} and Cha, \{S. N.\} and Y. Choi and Kang, \{D. J.\} and Butler, \{T. P.\} and Hasko, \{D. G.\} and Jung, \{J. E.\} and Kim, \{J. M.\} and Amaratunga, \{G. A.J.\}",

year = "2006",

doi = "10.1109/NANOEL.2006.1609695",

language = "English",

isbn = "0780393589",

series = "NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings",

pages = "89--92",

booktitle = "NanoSingapore 2006",

note = "2006 IEEE Conference on Emerging Technologies - Nanoelectronics ; Conference date: 10-01-2006 Through 13-01-2006",

}

Jang, JE, Cha, SN, Choi, Y, Kang, DJ, Butler, TP, Hasko, DG, Jung, JE, Kim, JM & Amaratunga, GAJ 2006, Nanotube based vertical nano-devices for high integration density. in NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings., 1609695, NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings, vol. 2006, pp. 89-92, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 10/01/06. https://doi.org/10.1109/NANOEL.2006.1609695

Nanotube based vertical nano-devices for high integration density. / Jang, J. E.; Cha, S. N.; Choi, Y. et al.
NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 89-92 1609695 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanotube based vertical nano-devices for high integration density

AU - Jang, J. E.

AU - Cha, S. N.

AU - Choi, Y.

AU - Kang, D. J.

AU - Butler, T. P.

AU - Hasko, D. G.

AU - Jung, J. E.

AU - Kim, J. M.

AU - Amaratunga, G. A.J.

PY - 2006

Y1 - 2006

N2 - Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.

AB - Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.

UR - https://www.scopus.com/pages/publications/33750817846

U2 - 10.1109/NANOEL.2006.1609695

DO - 10.1109/NANOEL.2006.1609695

M3 - Conference contribution

AN - SCOPUS:33750817846

SN - 0780393589

SN - 9780780393585

T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings

SP - 89

EP - 92

BT - NanoSingapore 2006

T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics

Y2 - 10 January 2006 through 13 January 2006

ER -

Jang JE, Cha SN, Choi Y, Kang DJ, Butler TP, Hasko DG et al. Nanotube based vertical nano-devices for high integration density. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 89-92. 1609695. (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings). doi: 10.1109/NANOEL.2006.1609695

Nanotube based vertical nano-devices for high integration density

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