Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

J. E. Jang; S. N. Cha; Y. Choi; G. A.J. Amaratunga; D. J. Kang; D. G. Hasko; J. E. Jung; J. M. Kim

doi:10.1063/1.2149982

Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

J. E. Jang, S. N. Cha, Y. Choi, G. A.J. Amaratunga, D. J. Kang, D. G. Hasko, J. E. Jung, J. M. Kim

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We report the fabrication process and the electrical characteristics of a nanocapacitor structure using metal-insulator-carbon nanotube-metal layers. The structure shows high capacitance and the possibility of ultrahigh integration density due to the unique nanotube structure. Nanoscale and high-aspect-ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures. This structure can be substituted for capacitors based on the silicon pillar structure in dynamic random access memory or as a nanoscale capacitor for various nanoelectronic devices.

Original language	English
Article number	263103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	26
DOIs	https://doi.org/10.1063/1.2149982
State	Published - 2005

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abstract = "We report the fabrication process and the electrical characteristics of a nanocapacitor structure using metal-insulator-carbon nanotube-metal layers. The structure shows high capacitance and the possibility of ultrahigh integration density due to the unique nanotube structure. Nanoscale and high-aspect-ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures. This structure can be substituted for capacitors based on the silicon pillar structure in dynamic random access memory or as a nanoscale capacitor for various nanoelectronic devices.",

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AU - Kang, D. J.

AU - Hasko, D. G.

AU - Jung, J. E.

AU - Kim, J. M.

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AB - We report the fabrication process and the electrical characteristics of a nanocapacitor structure using metal-insulator-carbon nanotube-metal layers. The structure shows high capacitance and the possibility of ultrahigh integration density due to the unique nanotube structure. Nanoscale and high-aspect-ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures. This structure can be substituted for capacitors based on the silicon pillar structure in dynamic random access memory or as a nanoscale capacitor for various nanoelectronic devices.

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Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

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