@inproceedings{4e6f0fb206084c54976a0ce344d9316c,
title = "Nanoscale capacitors based on metal-insulator-carbon nanotube-metal (MICNM) structures",
abstract = "We report on the electrical characteristics and the fabrication process of a nano-capacitor structure using metal-insulator-carbon nanotube-metal (MICNM) layers. The structure shows high capacitance and the possibility of ultra high integration density due to the unique nanotube structure. Nanoscale and high aspect ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures, This structure can be applied to the substitution of capacitors employing the silicon pillar structure in dynamic random access memory (DRAM) or as a nanoscale capacitor for various nanoelectronic devices.",
author = "Jang, {J. E.} and Cha, {S. N.} and Y. Choi and Kang, {D. J.} and Hasko, {D. G.} and Amaratunga, {G. A.J.}",
year = "2005",
doi = "10.1109/ESSDER.2005.1546705",
language = "English",
isbn = "0780392035",
series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",
pages = "545--547",
booktitle = "Proceedings of ESSDERC 2005",
note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",
}