Nanoelectromechanical switch with low voltage drive

J. E. Jang; S. N. Cha; Y. Choi; T. P. Butler; D. J. Kang; D. G. Hasko; J. E. Jung; Y. W. Jin; J. M. Kim; G. A.J. Amaratunga

doi:10.1063/1.2983743

Nanoelectromechanical switch with low voltage drive

J. E. Jang, S. N. Cha, Y. Choi, T. P. Butler, D. J. Kang, D. G. Hasko, J. E. Jung, Y. W. Jin, J. M. Kim, G. A.J. Amaratunga

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications.

Original language	English
Article number	113105
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2983743
State	Published - 2008

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title = "Nanoelectromechanical switch with low voltage drive",

abstract = "The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications.",

author = "Jang, {J. E.} and Cha, {S. N.} and Y. Choi and Butler, {T. P.} and Kang, {D. J.} and Hasko, {D. G.} and Jung, {J. E.} and Jin, {Y. W.} and Kim, {J. M.} and Amaratunga, {G. A.J.}",

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doi = "10.1063/1.2983743",

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AU - Jang, J. E.

AU - Cha, S. N.

AU - Choi, Y.

AU - Butler, T. P.

AU - Kang, D. J.

AU - Hasko, D. G.

AU - Jung, J. E.

AU - Jin, Y. W.

AU - Kim, J. M.

AU - Amaratunga, G. A.J.

PY - 2008

Y1 - 2008

N2 - The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications.

AB - The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications.

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

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Nanoelectromechanical switch with low voltage drive

Abstract

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