Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

J. E. Jang, S. N. Cha, Y. Choi, T. P. Butler, D. J. Kang, D. G. Hasko, J. E. Jung, J. M. Kim, G. A.J. Amaratunga

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages261-264
Number of pages4
StatePublished - 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 5 Dec 20057 Dec 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
Country/TerritoryUnited States
CityWashington, DC, MD
Period5/12/057/12/05

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