@inproceedings{cfcb1307c2ca449f8031c0f00c97b00f,
title = "Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)",
abstract = "A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well.",
author = "Jang, {J. E.} and Cha, {S. N.} and Y. Choi and Butler, {T. P.} and Kang, {D. J.} and Hasko, {D. G.} and Jung, {J. E.} and Kim, {J. M.} and Amaratunga, {G. A.J.}",
year = "2005",
language = "English",
isbn = "078039268X",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "261--264",
booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",
note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",
}