Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration

S. B. Cho, H. K. Shon, H. J. Kang, T. E. Hong, H. K. Kim, H. I. Lee, K. J. Kim, D. W. Moon

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

SIMS quantification and depth scale calibration has been based on ion implanted standards. In this work, the feasibility of using multiple delta layer reference materials for quantitative SIMS depth profiling is tested and presented. Preliminary studies on application of multiple As delta layer Si thin films to shallow junction analysis will be presented and discussed.

Original languageEnglish
Pages (from-to)302-305
Number of pages4
JournalApplied Surface Science
Volume203-204
DOIs
StatePublished - 15 Jan 2003

Bibliographical note

Funding Information:
Financial supports from KOSEF of Korea through ASSRC at Yonsei University, MOST of National Laboratory Projects, System IC 2010 Project are appreciated.

Keywords

  • As doping
  • Delta layer
  • MEIS
  • RSF
  • SIMS

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