Abstract
SIMS quantification and depth scale calibration has been based on ion implanted standards. In this work, the feasibility of using multiple delta layer reference materials for quantitative SIMS depth profiling is tested and presented. Preliminary studies on application of multiple As delta layer Si thin films to shallow junction analysis will be presented and discussed.
Original language | English |
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Pages (from-to) | 302-305 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 203-204 |
DOIs | |
State | Published - 15 Jan 2003 |
Bibliographical note
Funding Information:Financial supports from KOSEF of Korea through ASSRC at Yonsei University, MOST of National Laboratory Projects, System IC 2010 Project are appreciated.
Keywords
- As doping
- Delta layer
- MEIS
- RSF
- SIMS