Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change

Ki Hwan Kim; Bo Soo Kang; Myoung Jae Lee; Seung Eon Ahn; Chang Bum Lee; Genrikh Stefanovich; Wen Xu Xianyu; Chang Jung Kim; Youngsoo Park

doi:10.1109/LED.2009.2029247

Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change

Ki Hwan Kim
, Bo Soo Kang
, Myoung Jae Lee
, Seung Eon Ahn
, Chang Bum Lee
, Genrikh Stefanovich
, Wen Xu Xianyu
, Chang Jung Kim
, Youngsoo Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO _x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.

Original language	English
Article number	5233829
Pages (from-to)	1036-1038
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	10
DOIs	https://doi.org/10.1109/LED.2009.2029247
State	Published - Oct 2009

Keywords

Cross-point
Diode
Memory
Oxide

Access to Document

10.1109/LED.2009.2029247

Cite this

@article{4cc14e0df31e437180a33c6a7045c5b3,

title = "Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change",

abstract = "A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.",

keywords = "Cross-point, Diode, Memory, Oxide",

author = "Kim, \{Ki Hwan\} and Kang, \{Bo Soo\} and Lee, \{Myoung Jae\} and Ahn, \{Seung Eon\} and Lee, \{Chang Bum\} and Genrikh Stefanovich and Xianyu, \{Wen Xu\} and Kim, \{Chang Jung\} and Youngsoo Park",

year = "2009",

month = oct,

doi = "10.1109/LED.2009.2029247",

language = "English",

volume = "30",

pages = "1036--1038",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change

AU - Kim, Ki Hwan

AU - Kang, Bo Soo

AU - Lee, Myoung Jae

AU - Ahn, Seung Eon

AU - Lee, Chang Bum

AU - Stefanovich, Genrikh

AU - Xianyu, Wen Xu

AU - Kim, Chang Jung

AU - Park, Youngsoo

PY - 2009/10

Y1 - 2009/10

N2 - A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.

AB - A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.

KW - Cross-point

KW - Diode

KW - Memory

KW - Oxide

UR - https://www.scopus.com/pages/publications/72049118178

U2 - 10.1109/LED.2009.2029247

DO - 10.1109/LED.2009.2029247

M3 - Article

AN - SCOPUS:72049118178

SN - 0741-3106

VL - 30

SP - 1036

EP - 1038

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 5233829

ER -

Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this