Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change

Ki Hwan Kim, Bo Soo Kang, Myoung Jae Lee, Seung Eon Ahn, Chang Bum Lee, Genrikh Stefanovich, Wen Xu Xianyu, Chang Jung Kim, Youngsoo Park

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.

Original languageEnglish
Article number5233829
Pages (from-to)1036-1038
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number10
DOIs
StatePublished - Oct 2009

Keywords

  • Cross-point
  • Diode
  • Memory
  • Oxide

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