Abstract
A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnO x (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.
Original language | English |
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Article number | 5233829 |
Pages (from-to) | 1036-1038 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2009 |
Keywords
- Cross-point
- Diode
- Memory
- Oxide