@inproceedings{cfca17e64fe843dd9881a298b98cf9c8,
title = "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application",
abstract = "Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one. No signal of inter-layer interference has been observed. Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array.",
author = "Baek, {I. G.} and Kim, {D. C.} and Lee, {M. J.} and Kim, {H. J.} and Yim, {E. K.} and Lee, {M. S.} and Lee, {J. E.} and Ahn, {S. E.} and S. Seo and Lee, {J. H.} and Park, {J. C.} and Cha, {Y. K.} and Park, {S. O.} and Kim, {H. S.} and Yoo, {I. K.} and Chung, {U. In} and Moon, {J. T.} and Ryu, {B. I.}",
year = "2005",
language = "English",
isbn = "078039268X",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "750--753",
booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",
note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",
}