Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

Min Suk Oh; Dae Kue Hwang; Yong Seok Choi; Jang Won Kang; Seong Ju Park; Chi Sun Hwang; Kyoung Ik Cho

doi:10.1063/1.2936962

Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

Min Suk Oh, Dae Kue Hwang, Yong Seok Choi, Jang Won Kang, Seong Ju Park, Chi Sun Hwang, Kyoung Ik Cho

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

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Abstract

Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p -type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p -type ZnO after being annealed at 800 °C in an N₂ ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P₂O₅ phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.

Original language	English
Article number	111905
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2936962
State	Published - 2008

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Funding Information:
This work was partially supported by the IT R&D program of MIC/IITA (2006-S079-01, Smart window with transparent electronic devices), the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), and the Brain Korea 21 program.

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title = "Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering",

abstract = "Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p -type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p -type ZnO after being annealed at 800 °C in an N2 ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P2O5 phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.",

author = "Oh, {Min Suk} and Hwang, {Dae Kue} and Choi, {Yong Seok} and Kang, {Jang Won} and Park, {Seong Ju} and Hwang, {Chi Sun} and Cho, {Kyoung Ik}",

note = "Funding Information: This work was partially supported by the IT R&D program of MIC/IITA (2006-S079-01, Smart window with transparent electronic devices), the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), and the Brain Korea 21 program.",

year = "2008",

doi = "10.1063/1.2936962",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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T1 - Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

AU - Oh, Min Suk

AU - Hwang, Dae Kue

AU - Choi, Yong Seok

AU - Kang, Jang Won

AU - Park, Seong Ju

AU - Hwang, Chi Sun

AU - Cho, Kyoung Ik

N1 - Funding Information: This work was partially supported by the IT R&D program of MIC/IITA (2006-S079-01, Smart window with transparent electronic devices), the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), and the Brain Korea 21 program.

PY - 2008

Y1 - 2008

N2 - Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p -type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p -type ZnO after being annealed at 800 °C in an N2 ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P2O5 phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.

AB - Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p -type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p -type ZnO after being annealed at 800 °C in an N2 ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P2O5 phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.

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JO - Applied Physics Letters

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ER -

Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

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