Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films

D. W. Moon; K. J. Kim; Y. Park; H. K. Kim; Y. H. Ha; D. H. Oh; H. J. Kang

doi:10.1002/1096-9918(200008)30:1<484::AID-SIA828>3.0.CO;2-U

Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films

D. W. Moon, K. J. Kim, Y. Park, H. K. Kim, Y. H. Ha, D. H. Oh, H. J. Kang

Department of New Biology

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Medium energy Ion Scattering Spectroscopy (MEISS) can provide non-destructive quantitative surface and near-surface composition with atomic layer depth resolution. The special features of MEISS can be utilized to improve quantification of conventional surface analysis techniques by studying preferential sputtering, which is one of the major problems in quantitative surface analysis using sputtering techniques. This phenomenon was studied in detail with MEISS, in situ and ex situ XPS analysis, RBS, and (inductively coupled plasma optical emission spectrometry) for WSi₂.

Original language	English
Pages (from-to)	484-487
Number of pages	4
Journal	Surface and Interface Analysis
Volume	30
Issue number	1
DOIs	https://doi.org/10.1002/1096-9918(200008)30:1<484::AID-SIA828>3.0.CO;2-U
State	Published - Aug 2000
Event	8th European Conference on Applications of Surface and Interface Analisys, ECASIA 99 - Sevilla, Spain Duration: 4 Oct 1999 → 8 Oct 1999

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10.1002/1096-9918(200008)30:1<484::AID-SIA828>3.0.CO;2-U

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title = "Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films",

abstract = "Medium energy Ion Scattering Spectroscopy (MEISS) can provide non-destructive quantitative surface and near-surface composition with atomic layer depth resolution. The special features of MEISS can be utilized to improve quantification of conventional surface analysis techniques by studying preferential sputtering, which is one of the major problems in quantitative surface analysis using sputtering techniques. This phenomenon was studied in detail with MEISS, in situ and ex situ XPS analysis, RBS, and (inductively coupled plasma optical emission spectrometry) for WSi2.",

author = "Moon, \{D. W.\} and Kim, \{K. J.\} and Y. Park and Kim, \{H. K.\} and Ha, \{Y. H.\} and Oh, \{D. H.\} and Kang, \{H. J.\}",

year = "2000",

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doi = "10.1002/1096-9918(200008)30:1<484::AID-SIA828>3.0.CO;2-U",

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journal = "Surface and Interface Analysis",

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note = "8th European Conference on Applications of Surface and Interface Analisys, ECASIA 99 ; Conference date: 04-10-1999 Through 08-10-1999",

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TY - JOUR

T1 - Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films

AU - Moon, D. W.

AU - Kim, K. J.

AU - Park, Y.

AU - Kim, H. K.

AU - Ha, Y. H.

AU - Oh, D. H.

AU - Kang, H. J.

PY - 2000/8

Y1 - 2000/8

N2 - Medium energy Ion Scattering Spectroscopy (MEISS) can provide non-destructive quantitative surface and near-surface composition with atomic layer depth resolution. The special features of MEISS can be utilized to improve quantification of conventional surface analysis techniques by studying preferential sputtering, which is one of the major problems in quantitative surface analysis using sputtering techniques. This phenomenon was studied in detail with MEISS, in situ and ex situ XPS analysis, RBS, and (inductively coupled plasma optical emission spectrometry) for WSi2.

AB - Medium energy Ion Scattering Spectroscopy (MEISS) can provide non-destructive quantitative surface and near-surface composition with atomic layer depth resolution. The special features of MEISS can be utilized to improve quantification of conventional surface analysis techniques by studying preferential sputtering, which is one of the major problems in quantitative surface analysis using sputtering techniques. This phenomenon was studied in detail with MEISS, in situ and ex situ XPS analysis, RBS, and (inductively coupled plasma optical emission spectrometry) for WSi2.

UR - https://www.scopus.com/pages/publications/0034244852

U2 - 10.1002/1096-9918(200008)30:1<484::AID-SIA828>3.0.CO;2-U

DO - 10.1002/1096-9918(200008)30:1<484::AID-SIA828>3.0.CO;2-U

M3 - Conference article

AN - SCOPUS:0034244852

SN - 0142-2421

VL - 30

SP - 484

EP - 487

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 1

T2 - 8th European Conference on Applications of Surface and Interface Analisys, ECASIA 99

Y2 - 4 October 1999 through 8 October 1999

ER -

Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films

Abstract

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