Magnetoresistance oscillations in magnetic tunnel junction

P. D. Kim; J. Zidanic; N. V. Volkov; G. S. Patrin; Y. Y. Song; S. C. Yu; C. G. Kim; J. H. Yun

doi:10.1016/j.jmmm.2007.02.106

Magnetoresistance oscillations in magnetic tunnel junction

P. D. Kim
, J. Zidanic
, N. V. Volkov
, G. S. Patrin
, Y. Y. Song
, S. C. Yu
, C. G. Kim
, J. H. Yun

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

We report unconventional oscillatory tunnel magnetoresistance as a function of applied bias in the magnetic tunnel junction with the Al₂O₃ barrier. We attribute this feature to the inhomogeneity of the potential barrier structure. Ferromagnetic grains inside the potential barrier are formed at the technological stage. In this case, the TMR oscillation occurs due to the discrete charging effect that is well known as the Coulomb blockade.

Original language	English
Pages (from-to)	236-239
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	316
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2007.02.106
State	Published - Sep 2007

Bibliographical note

Funding Information:
This work was supported by the Korean Science and Engineering Foundation (KOSEF), Grant no. R01-2004-000-10882-0. N.V. Volkov thanks the Russian Science Support Foundation for support.

Keywords

Magnetic tunnel junction
Magnetoresistance osciilation
TMR

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10.1016/j.jmmm.2007.02.106

Cite this

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title = "Magnetoresistance oscillations in magnetic tunnel junction",

abstract = "We report unconventional oscillatory tunnel magnetoresistance as a function of applied bias in the magnetic tunnel junction with the Al2O3 barrier. We attribute this feature to the inhomogeneity of the potential barrier structure. Ferromagnetic grains inside the potential barrier are formed at the technological stage. In this case, the TMR oscillation occurs due to the discrete charging effect that is well known as the Coulomb blockade.",

keywords = "Magnetic tunnel junction, Magnetoresistance osciilation, TMR",

author = "Kim, \{P. D.\} and J. Zidanic and Volkov, \{N. V.\} and Patrin, \{G. S.\} and Song, \{Y. Y.\} and Yu, \{S. C.\} and Kim, \{C. G.\} and Yun, \{J. H.\}",

note = "Funding Information: This work was supported by the Korean Science and Engineering Foundation (KOSEF), Grant no. R01-2004-000-10882-0. N.V. Volkov thanks the Russian Science Support Foundation for support.",

year = "2007",

month = sep,

doi = "10.1016/j.jmmm.2007.02.106",

language = "English",

volume = "316",

pages = "236--239",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "2 SPEC. ISS.",

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TY - JOUR

T1 - Magnetoresistance oscillations in magnetic tunnel junction

AU - Kim, P. D.

AU - Zidanic, J.

AU - Volkov, N. V.

AU - Patrin, G. S.

AU - Song, Y. Y.

AU - Yu, S. C.

AU - Kim, C. G.

AU - Yun, J. H.

N1 - Funding Information: This work was supported by the Korean Science and Engineering Foundation (KOSEF), Grant no. R01-2004-000-10882-0. N.V. Volkov thanks the Russian Science Support Foundation for support.

PY - 2007/9

Y1 - 2007/9

N2 - We report unconventional oscillatory tunnel magnetoresistance as a function of applied bias in the magnetic tunnel junction with the Al2O3 barrier. We attribute this feature to the inhomogeneity of the potential barrier structure. Ferromagnetic grains inside the potential barrier are formed at the technological stage. In this case, the TMR oscillation occurs due to the discrete charging effect that is well known as the Coulomb blockade.

AB - We report unconventional oscillatory tunnel magnetoresistance as a function of applied bias in the magnetic tunnel junction with the Al2O3 barrier. We attribute this feature to the inhomogeneity of the potential barrier structure. Ferromagnetic grains inside the potential barrier are formed at the technological stage. In this case, the TMR oscillation occurs due to the discrete charging effect that is well known as the Coulomb blockade.

KW - Magnetic tunnel junction

KW - Magnetoresistance osciilation

KW - TMR

UR - https://www.scopus.com/pages/publications/34250673234

U2 - 10.1016/j.jmmm.2007.02.106

DO - 10.1016/j.jmmm.2007.02.106

M3 - Article

AN - SCOPUS:34250673234

SN - 0304-8853

VL - 316

SP - 236

EP - 239

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SPEC. ISS.

ER -

Magnetoresistance oscillations in magnetic tunnel junction

Abstract

Bibliographical note

Keywords

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