Magnetoresistance in laser-deposited Zn1-xCoxO thin films

Jae Hyun Kim; Hyojin Kim; Dojin Kim; Young Eon Ihm; Woong Kil Choo

doi:10.1016/S0921-4526(02)01774-X

Magnetoresistance in laser-deposited Zn_1-xCo_xO thin films

Jae Hyun Kim, Hyojin Kim, Dojin Kim, Young Eon Ihm, Woong Kil Choo

Division of Energy Techonology

Research output: Contribution to journal › Conference article › peer-review

64 Scopus citations

Abstract

We have measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn_1-xCo_xO (x = 0.02-0.25) thin films doped with 1 mol% Al. Three different MR behaviors are observed depending on the concentration of magnetic Co ions. The Zn_1-xCo_xO:Al film shows a giant positive MR as high as ∼ 60% in 70 kOe at 5 K for x = 0.20. The observed MR features are discussed in terms of weak localization, s-d exchange coupling between the conducting carriers and localized spins of Co ions, and spin-disorder scattering.

Original language	English
Pages (from-to)	304-306
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	327
Issue number	2-4
DOIs	https://doi.org/10.1016/S0921-4526(02)01774-X
State	Published - Apr 2003
Event	ISAMM 2002 - Ha Long Bay, Viet Nam Duration: 2 Oct 2002 → 4 Oct 2002

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2001-005-E00042). The authors are grateful to the Korea Basic Science Institute for low-temperature measurements.

Keywords

Diluted magnetic semiconductors
Magnetoresistance
ZnCoO

Access to Document

10.1016/S0921-4526(02)01774-X

Cite this

@article{217432fefe764a80a86cd0e5ec9400c0,

title = "Magnetoresistance in laser-deposited Zn1-xCoxO thin films",

abstract = "We have measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn1-xCoxO (x = 0.02-0.25) thin films doped with 1 mol% Al. Three different MR behaviors are observed depending on the concentration of magnetic Co ions. The Zn1-xCoxO:Al film shows a giant positive MR as high as ∼ 60% in 70 kOe at 5 K for x = 0.20. The observed MR features are discussed in terms of weak localization, s-d exchange coupling between the conducting carriers and localized spins of Co ions, and spin-disorder scattering.",

keywords = "Diluted magnetic semiconductors, Magnetoresistance, ZnCoO",

author = "Kim, {Jae Hyun} and Hyojin Kim and Dojin Kim and Ihm, {Young Eon} and Choo, {Woong Kil}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2001-005-E00042). The authors are grateful to the Korea Basic Science Institute for low-temperature measurements.; ISAMM 2002 ; Conference date: 02-10-2002 Through 04-10-2002",

year = "2003",

month = apr,

doi = "10.1016/S0921-4526(02)01774-X",

language = "English",

volume = "327",

pages = "304--306",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "2-4",

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TY - JOUR

T1 - Magnetoresistance in laser-deposited Zn1-xCoxO thin films

AU - Kim, Jae Hyun

AU - Kim, Hyojin

AU - Kim, Dojin

AU - Ihm, Young Eon

AU - Choo, Woong Kil

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2001-005-E00042). The authors are grateful to the Korea Basic Science Institute for low-temperature measurements.

PY - 2003/4

Y1 - 2003/4

N2 - We have measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn1-xCoxO (x = 0.02-0.25) thin films doped with 1 mol% Al. Three different MR behaviors are observed depending on the concentration of magnetic Co ions. The Zn1-xCoxO:Al film shows a giant positive MR as high as ∼ 60% in 70 kOe at 5 K for x = 0.20. The observed MR features are discussed in terms of weak localization, s-d exchange coupling between the conducting carriers and localized spins of Co ions, and spin-disorder scattering.

AB - We have measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn1-xCoxO (x = 0.02-0.25) thin films doped with 1 mol% Al. Three different MR behaviors are observed depending on the concentration of magnetic Co ions. The Zn1-xCoxO:Al film shows a giant positive MR as high as ∼ 60% in 70 kOe at 5 K for x = 0.20. The observed MR features are discussed in terms of weak localization, s-d exchange coupling between the conducting carriers and localized spins of Co ions, and spin-disorder scattering.

KW - Diluted magnetic semiconductors

KW - Magnetoresistance

KW - ZnCoO

UR - http://www.scopus.com/inward/record.url?scp=0037399737&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(02)01774-X

DO - 10.1016/S0921-4526(02)01774-X

M3 - Conference article

AN - SCOPUS:0037399737

SN - 0921-4526

VL - 327

SP - 304

EP - 306

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 2-4

T2 - ISAMM 2002

Y2 - 2 October 2002 through 4 October 2002

ER -