Magnetoresistance and magnetic behaviors of the oxide-diluted magnetic semiconductor Zn1-xCoxO thin films

Jae Hyun Kim; Woong Kil Choo; Hyojin Kim; Dojin Kim; Young Eon Ihm

Magnetoresistance and magnetic behaviors of the oxide-diluted magnetic semiconductor Zn_1-xCo_xO thin films

Jae Hyun Kim, Woong Kil Choo, Hyojin Kim, Dojin Kim, Young Eon Ihm

Division of Energy Techonology

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

We report on the magnetoresistance and magnetic properties of the oxide-diluted magnetic semiconductor Zn_1-xCo_xO (x = 0.02 - 0.25) thin films grown on sapphire substrates by pulsed laser deposition. Magnetization measurements show almost paramagnetic behavior with a large negative value of the Curie-Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than Mn-doped ZnO. The injection of itinerant electrons over 10¹⁹ cm^-3 is achieved by Al doping. Magnetoresistance measurements for n-type Zn_1-xCo_xO:Al reveal three qualitatively different behaviors depending on the Co concentration. We observe a giant positive magnetoresistance as large as 60 % for x = 0.20 at 5 K.

Original language	English
Pages (from-to)	S258-S262
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
State	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Diluted magnetic semiconductors
Magnetic properties
Magnetoresistance
ZnCoO

Cite this

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title = "Magnetoresistance and magnetic behaviors of the oxide-diluted magnetic semiconductor Zn1-xCoxO thin films",

abstract = "We report on the magnetoresistance and magnetic properties of the oxide-diluted magnetic semiconductor Zn1-xCoxO (x = 0.02 - 0.25) thin films grown on sapphire substrates by pulsed laser deposition. Magnetization measurements show almost paramagnetic behavior with a large negative value of the Curie-Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than Mn-doped ZnO. The injection of itinerant electrons over 1019 cm-3 is achieved by Al doping. Magnetoresistance measurements for n-type Zn1-xCoxO:Al reveal three qualitatively different behaviors depending on the Co concentration. We observe a giant positive magnetoresistance as large as 60 % for x = 0.20 at 5 K.",

keywords = "Diluted magnetic semiconductors, Magnetic properties, Magnetoresistance, ZnCoO",

author = "Kim, {Jae Hyun} and Choo, {Woong Kil} and Hyojin Kim and Dojin Kim and Ihm, {Young Eon}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S258--S262",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

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TY - JOUR

T1 - Magnetoresistance and magnetic behaviors of the oxide-diluted magnetic semiconductor Zn1-xCoxO thin films

AU - Kim, Jae Hyun

AU - Choo, Woong Kil

AU - Kim, Hyojin

AU - Kim, Dojin

AU - Ihm, Young Eon

PY - 2003/2

Y1 - 2003/2

N2 - We report on the magnetoresistance and magnetic properties of the oxide-diluted magnetic semiconductor Zn1-xCoxO (x = 0.02 - 0.25) thin films grown on sapphire substrates by pulsed laser deposition. Magnetization measurements show almost paramagnetic behavior with a large negative value of the Curie-Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than Mn-doped ZnO. The injection of itinerant electrons over 1019 cm-3 is achieved by Al doping. Magnetoresistance measurements for n-type Zn1-xCoxO:Al reveal three qualitatively different behaviors depending on the Co concentration. We observe a giant positive magnetoresistance as large as 60 % for x = 0.20 at 5 K.

AB - We report on the magnetoresistance and magnetic properties of the oxide-diluted magnetic semiconductor Zn1-xCoxO (x = 0.02 - 0.25) thin films grown on sapphire substrates by pulsed laser deposition. Magnetization measurements show almost paramagnetic behavior with a large negative value of the Curie-Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than Mn-doped ZnO. The injection of itinerant electrons over 1019 cm-3 is achieved by Al doping. Magnetoresistance measurements for n-type Zn1-xCoxO:Al reveal three qualitatively different behaviors depending on the Co concentration. We observe a giant positive magnetoresistance as large as 60 % for x = 0.20 at 5 K.

KW - Diluted magnetic semiconductors

KW - Magnetic properties

KW - Magnetoresistance

KW - ZnCoO

UR - http://www.scopus.com/inward/record.url?scp=0037305449&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037305449

SN - 0374-4884

VL - 42

SP - S258-S262

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Magnetoresistance and magnetic behaviors of the oxide-diluted magnetic semiconductor Zn_1-xCo_xO thin films

Abstract

Keywords

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